Time limit function utilization apparatus

ABSTRACT

A time limit function utilization apparatus includes a first function block, a second function block, a signal line which connects the first and second function blocks and allows using a desired function that is generated by accessing the first and second function blocks with each other, and a semiconductor time switch interposed in or connected to the signal line, and disables or enables mutual access between the first and second function blocks upon the lapse of a predetermined time.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a Continuation of U.S. application Ser. No.10/612,405, filed Jul. 3, 2003, the entire contents of which isincorporated herein by reference.

This application is based upon and claims the benefit of priority fromthe prior Japanese Patent Applications No. 2002-198144, filed Jul. 8,2002; No. 2002-336961, filed Nov. 20, 2002; and No. 2003-188792, filedJun. 30, 2003, the entire contents of all of which are incorporatedherein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a time limit function utilizationapparatus, particularly, to a semiconductor integrated circuit formedfrom an age-based change device (aging device) whose output changes overtime and a circuit technology controlling the life time of the agingdevice, more particularly, to an integrable electronic timer whichaccurately operates in an off-line state in which the timer isdisconnected from a battery.

2. Description of the Related Art

A security system which sets an expiration date on a cipher or passwordhas widely been used. For example, in satellite broadcasting, anexpiration date is set on an encryption key, and the user is obligatedto change the password at predetermined intervals, enhancing security.

For example, the following technique has been reported (see, e.g., Jpn.Pat. Appln. KOKAI Publication No. 10-189780). A nonvolatilesemiconductor memory whose data holding life time is arbitrarily set isused for a memory card, commutation ticket, or the like. Data is heldfor a predetermined period, and after the lapse of the predeterminedperiod, the data is deleted to inhibit the use of the memory card,commutation ticket, or the like.

The nonvolatile semiconductor memory determines the data holding lifetime by adjusting the atomic composition ratio in each gate insulatingfilm of the nonvolatile memory which constitutes a memory. It istherefore difficult to reproduce an accurate holding life time. In orderto form a plurality of memory areas with an arbitrarily set expirationdate, memories having gate insulating films with different atomiccomposition ratios must be formed on a single substrate, which requiresa complicated manufacturing method. Undesirably, the holding time can beeasily prolonged by accessing a nonvolatile memory and refreshing data.

A technique capable of, even if power is cut, calculating andautomatically setting the current time upon power-on again has also beenreported (see, e.g., Jpn. Pat. Appln. KOKAI Publication No. 9-127271).

According to this technique, the lapsed time is measured by using achange in the threshold of a memory device such as an EPROM device. Thelapsed time between power-off and the next power-on is calculated from achange in the threshold of the memory device, and added to the power-offtime, obtaining the current time.

A time cell technique of determining the lapsed time from the dischargerate at which a charge accumulation element looses electrostatic chargesvia an insulator has also been reported. The time cell can be soprogrammed as to select a specific period to be measured (see, e.g.,Jpn. Pat. Appln. KOKAI Publication No. 2002-246887).

The latter two techniques measure the lapsed time, detecting thethreshold voltage change or the discharge rate change, by monitoringcharge leakage from the floating gate of a memory cell. Thus, the twotechniques are essentially the same and are said to be an age-baseschange device (aging device).

A nonvolatile memory cell can be used as one means for implementing anelectronic timer without any battery. An EEPROM with a two-layered gatestructure of a floating gate and control gate generally has a chargeholding function for almost 10 years. The charge holding period (lifetime) can be shortened by forming a tunnel oxide film as thin as 7 nmbetween the substrate and the floating gate. The precise control of thecharge holding period can implement a battery-less electronic timer(BLET).

In an EEPROM of this type, if the film thickness of the tunnel oxidefilm varies in the manufacture, the life time greatly varies. Forexample, the film thickness for all bits is made to fall within an errorof ±5% in a process for a 6-nm film thickness of the tunnel oxide film.At this time, as shown in FIG. 119, the gate leakage current whichdetermines the life time of an aging device becomes 20 times larger for−5%, and becomes as small as 1/20 for +5%. Such great variations inleakage current lead to a large difference in the life time, whichcannot be permitted in electronic timers.

This is a serious problem in manufacturing an aging device.

When an electronic timer without any battery is implemented using anaging device whose output changes over time, it is difficult to set anaccurate operation time because manufacturing variations (of not onlythe tunnel oxide thickness but also other cell structure parameters) inaging device influence the life time.

Demands have arisen for the advent of a semi-conductor integratedcircuit capable of suppressing the influence of the presence of a falsebit or manufacturing variations in aging device structure parameters(tunnel insulating film thickness, impurity concentration, junctionarea, gate end shape, and the like) on the life time of the agingdevice, imposing a time limit to the memory information, and enhancingthe controllability of the electronic timer time.

BRIEF SUMMARY OF THE INVENTION

A time limit function utilization apparatus according to a first aspectof the present invention comprises

a first functional block;

a second functional block;

a signal line which connects the first functional block and the secondfunctional block and allows using a desired function that is generatedby accessing the first functional block and the second functional blockwith each other; and

a semiconductor time switch which is interposed in or connected to thesignal line, and substantially disables or substantially enables mutualaccess between the first functional block and the second functionalblock upon a lapse of a first predetermined time.

A semiconductor integrated circuit according to a second aspect of thepresent invention comprises

an aging circuit configured by parallel-connecting a plurality of agingdevices in which an age-based change occurs while a power supply isdisconnected, and an output signal sensed in read changes over time; and

a sense circuit comparing the output signal from the aging circuit witha reference signal.

A semiconductor integrated circuit according to a third aspect of thepresent invention comprises

a plurality of aging devices in which an age-based change occurs while apower supply is disconnected, and output signals sensed in read changeover time;

a plurality of operational circuits arranged in correspondence with theplurality of aging devices, and having at least three terminals,respectively, first terminals of which receive the output signals fromthe plurality of aging devices;

a plurality of first memory areas electrically connected to secondterminals of the plurality of operational circuits, respectively, andeach storing at least one predetermined signal level;

an adder electrically connected to third terminals of the plurality ofoperational circuits and adding the output signals from the plurality ofoperational circuits appearing at the third terminals;

a plurality of circuit breakers which cut off output signals from theplurality of aging devices before the adder receives the output signalon the basis of operational results of the plurality of operationalcircuits that are obtained by comparing each of the output signals fromthe plurality of aging devices with the predetermined signal level;

a second memory area where a predetermined reference signal is stored,and

a sense circuit which compares an output signal from the adder and thereference signal stored in the second memory.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a conceptual view showing a time limit utilization apparatusaccording to the first embodiment of the present invention;

FIG. 2 is a conceptual view showing a time limit utilization apparatusaccording to the second embodiment;

FIG. 3 is a conceptual view showing a time limit utilization apparatusaccording to the third embodiment;

FIG. 4 is a conceptual view showing a time limit utilization apparatusaccording to the fourth embodiment;

FIG. 5 is a conceptual view showing a time limit utilization apparatusaccording to the fifth embodiment;

FIG. 6 is a conceptual view showing a time limit utilization apparatusaccording to the sixth embodiment;

FIG. 7 is a conceptual view showing a time limit utilization apparatusaccording to the seventh embodiment;

FIG. 8 is a conceptual view showing a time limit utilization apparatusaccording to the eighth embodiment;

FIG. 9 is a conceptual view showing a time limit utilization apparatusaccording to the ninth embodiment;

FIG. 10 is a conceptual view showing a time limit utilization apparatusaccording to the 10th embodiment;

FIG. 11 is a conceptual view showing a time limit utilization apparatusaccording to the 11th embodiment;

FIG. 12 is a conceptual view showing a time limit utilization apparatusaccording to the 12th embodiment;

FIG. 13 is a conceptual view showing a time limit utilization apparatusaccording to the 13th embodiment;

FIG. 14 is a schematic view showing the section and connections of anaging device according to the 14th embodiment;

FIG. 15 is a schematic view showing the section and connections of theaging device according to the 14th embodiment;

FIG. 16 is a view showing an energy band for explaining the operationprinciple of the aging device according to the 14th embodiment;

FIG. 17 is a schematic view showing the section and connections forexplaining the operation principle of the aging device according to the14th embodiment;

FIG. 18 is a view showing an energy band for explaining the operationprinciple of the aging device according to the 14th embodiment;

FIG. 19 is a schematic view showing the section and connections of adetailed arrangement example of the aging device according to the 14thembodiment;

FIG. 20 is a schematic view showing the section and connections of anaging device according to the 15th embodiment;

FIG. 21 is a schematic view showing the section and connections forexplaining the operation principle of the aging device according to the15th embodiment;

FIG. 22 is a view showing an energy band for explaining the operationprinciple of the aging device according to the 15th embodiment;

FIG. 23 is a schematic view showing the section and connections forexplaining the operation principle of the aging device according to the15th embodiment;

FIG. 24 is a view showing an energy band for explaining the operationprinciple of the aging device according to the 15th embodiment;

FIG. 25 is a schematic view showing the section and connections of adetailed arrangement example of the aging device according to the 15thembodiment;

FIG. 26 is a schematic view showing the section and connections of anaging device according to the 16th embodiment;

FIG. 27 is a schematic view showing the section and connections forexplaining the operation principle of the aging device according to the16th embodiment;

FIG. 28 is a schematic view showing the section and connections of anaging device according to the 17th embodiment;

FIG. 29 is a schematic view showing the section and connections of anaging device according to the 18th embodiment;

FIG. 30 is a schematic view showing the section and connections of theaging device according to the 18th embodiment;

FIG. 31 is a schematic view showing the section and connections of anaging device according to the 19th embodiment;

FIG. 32 is a schematic view showing the section and connections of theaging device according to the 19th embodiment;

FIG. 33 is a schematic view showing the section and connections of anaging device according to the 20th embodiment;

FIG. 34 is a schematic view showing the section and connections of adetailed arrangement example of the aging device according to the 20thembodiment;

FIG. 35 is a schematic view showing the section and connections of anaging device according to the 21st embodiment;

FIG. 36 is a schematic view showing the section and connections of adetailed arrangement example of the aging device according to the 21stembodiment;

FIG. 37 is a schematic view showing the section and connections of anaging device according to the 22nd embodiment;

FIG. 38 is a schematic view showing the section and connections of anaging device according to the 23rd embodiment;

FIG. 39 is a schematic view showing the section and connections of anaging device according to the 24th embodiment;

FIG. 40 is a schematic view showing the section and connections of anaging device according to the 25th embodiment;

FIG. 41 is a schematic view showing the section and connections of anaging device according to the 26th embodiment;

FIG. 42 is a schematic view of the section and connections showing thecharge injection method of the aging device according to the 26thembodiment;

FIG. 43 is a schematic view of the section and connections showinganother charge injection method of the aging device according to the26th embodiment of the present invention;

FIG. 44 is a schematic view of the section and connections showing theoperation method of the aging device according to the 26th embodiment;

FIG. 45 is a schematic view of the section and connections showinganother operation method of the aging device according to the 26thembodiment;

FIGS. 46A and 46B are a schematic perspective view and plan view showingan aging device according to the 27th embodiment, respectively;

FIG. 47 is a schematic plan view showing the charge injection method ofthe aging device according to the 27th embodiment;

FIG. 48 is a schematic plan view showing the operation method of theaging device according to the 27th embodiment;

FIG. 49 is a schematic view showing the section and connections of anaging device according to the 28th embodiment;

FIG. 50 is a schematic sectional view showing the charge injectionmethod of the aging device according to the 28th embodiment;

FIG. 51 is a schematic sectional view showing another charge injectionmethod of the aging device according to the 28th embodiment;

FIG. 52 is a schematic sectional view showing the operation method ofthe aging device according to the 28th embodiment;

FIG. 53 is a schematic view showing the section and connections of anaging device according to the 29th embodiment;

FIG. 54 is a schematic sectional view showing the charge injectionmethod of the aging device according to the 29th embodiment;

FIG. 55 is a schematic sectional view showing another charge injectionmethod of the aging device according to the 29th embodiment;

FIG. 56 is a schematic sectional view showing the operation method ofthe aging device according to the 29th embodiment;

FIG. 57A is a schematic plan view showing an aging device according tothe 30th embodiment;

FIG. 57B is a sectional view taken along the line 57B-57B in FIG. 57A;

FIG. 57C is a sectional view taken along the line 57C-57C in FIG. 57A;

FIG. 58A is a schematic sectional view for explaining the chargeinjection method of the aging device according to the 30th embodiment;

FIG. 58B is a schematic sectional view for explaining the operationprinciple of the aging device shown in FIG. 58A;

FIG. 58C is a graph showing the aging device shown in FIG. 58A and thelife time characteristic;

FIG. 59A is a schematic sectional view for explaining another chargeinjection method of the aging device according to the 30th embodiment;

FIG. 59B is a schematic sectional view for explaining the operationprinciple of the aging device shown in FIG. 59A;

FIG. 59C is a graph showing the aging device shown in FIG. 59A and thelife time characteristic;

FIG. 60A is a schematic sectional view for explaining still anothercharge injection method of the aging device according to the 30thembodiment;

FIG. 60B is a schematic sectional view for explaining the operationprinciple of the aging device shown in FIG. 60A;

FIG. 60C is a graph showing the aging device shown in FIG. 60A and thelife time characteristic;

FIG. 61A is a schematic sectional view for explaining still anothercharge injection method of the aging device according to the 30thembodiment;

FIG. 61B is a schematic sectional view for explaining the operationprinciple of the aging device shown in FIG. 61A;

FIG. 61C is a graph showing the aging device shown in FIG. 61A and thelife time characteristic;

FIG. 62A is a schematic plan view showing an aging device according tothe 31st embodiment;

FIG. 62B is a sectional view taken along the line 62B-62B in FIG. 62A;

FIG. 63A is a schematic plan view showing an aging device according tothe 32nd embodiment;

FIG. 63B is a sectional view taken along the line 63B-63B in FIG. 63A;

FIG. 64A is a schematic plan view showing an aging device according tothe 33rd embodiment;

FIG. 64B is a sectional view taken along the line 64B-64B in FIG. 64A;

FIG. 65A is a schematic plan view showing an aging device according tothe 34th embodiment;

FIG. 65B is a sectional view taken along the line 65B-65B in FIG. 65A;

FIG. 66 is a circuit diagram showing an aging device according to the35th embodiment;

FIG. 67 is a schematic view showing the section and connections of theaging device according to the 35th embodiment;

FIG. 68A is a plan view showing the aging device according to the 35thembodiment;

FIG. 68B is a sectional view taken along the line 68B-68B in FIG. 68A;

FIG. 69A is a plan view showing an aging device according to amodification to the 35th embodiment;

FIG. 69B is a sectional view taken along the line 69B-69B in FIG. 69A;

FIG. 70 is a circuit diagram showing an aging device according to the36th embodiment;

FIG. 71 is a circuit diagram showing an aging device according to amodification to the 36th embodiment;

FIG. 72 is a graph showing the threshold voltage dependence of the lifetime;

FIG. 73 is a graph showing the gate insulating film thickness dependenceof the life time;

FIG. 74 is a graph showing the junction area dependence of the lifetime;

FIG. 75 is a graph showing the impurity concentration dependence of thelife time;

FIG. 76 is a view showing the basic arrangement of an aging device;

FIG. 77 is a sectional view showing the first concrete example whichrealizes the basic arrangement of the aging device;

FIGS. 78A to 78F are schematic views for explaining that the arrangementin FIG. 77 functions as an aging device;

FIG. 79 is a graph showing an age-based change in an output signal fromthe aging device in FIG. 77;

FIG. 80 is a sectional view showing the second concrete example whichsatisfies the basic arrangement of the aging device;

FIG. 81 is a sectional view showing the third concrete example whichsatisfies the basic arrangement of the aging device;

FIG. 82 is a graph showing the bit count density of film thicknessvariations;

FIG. 83 is a schematic view showing parallel-connected aging devices inan aging circuit according to the 37th embodiment;

FIG. 84 is a graph showing the relationship between the drain currentcharacteristic and the life time;

FIG. 85 is a flow chart showing a process of determining the total lifetime;

FIG. 86 is a view showing an example in which parallel-connected agingdevices are dispersedly arranged;

FIG. 87 is a graph showing the influence of the impurity concentrationon the gate leakage current;

FIGS. 88A and 88B are a plan view and graph, respectively, showing thefact that a false bit dominates the life time when aging devices areseries-connected;

FIG. 89 is a graph showing an N value which establishes the Stirling'sformula;

FIG. 90 is a table showing a list of methods of realizing “forget” and“remember”;

FIGS. 91A to 91D are graphs showing output signals from various agingdevices;

FIG. 92 is a schematic sectional view showing the cell of an agingcircuit according to the 38th embodiment in which normally-on andnormally-off aging devices are series-connected so as to turn on theaging circuit only during a predetermined time;

FIG. 93 is a schematic plan view showing another aging circuit accordingto the 38th embodiment in which a plurality of normally-on aging devicesare parallel-connected, a plurality of normally-off aging devices areparallel-connected, and then the parallel-connected portions areseries-connected so as to turn on the aging circuit only during apredetermined time;

FIG. 94 is a schematic plan view showing still another aging circuitaccording to the 38th embodiment which is turned off only during apredetermined time;

FIG. 95 is a schematic view showing the arrangement of an electronictimer using an aging device according to the 39th embodiment;

FIG. 96 is a view showing a method of realizing an aging flag;

FIG. 97A is a schematic view showing a modification to the 37thembodiment in which series-connected sets of aging devices areparallel-connected;

FIG. 97B is a graph for explaining improvement of the influence ofvariations in tunnel film thickness by the arrangement in FIG. 97A;

FIGS. 98A and 98B are a graph showing the frequency distribution of eachbit as a function of the drain current owing to a manufacturingvariation between chips, and a graph showing a temporal change in thesum of drain current obtained by adding bits having this distribution,respectively;

FIGS. 99A and 99B are graphs showing the concept of trimming accordingto the 40th embodiment;

FIGS. 100A and 100B are graphs showing a comparison between temporalchanges in the sum of drain current before and after trimming;

FIG. 101 is a view showing a circuit arrangement in which a trimmingcircuit is incorporated in a parallelized aging circuit;

FIG. 102 is a view showing another circuit arrangement in which atrimming circuit is incorporated in a parallelized aging circuit;

FIG. 103 is a view showing an improvement of the circuit in FIG. 102 inwhich a memory storing a trimming result is accessibly arranged;

FIGS. 104A and 104B are views showing an example using a bipolartransistor as a trimming transistor;

FIG. 105 is a view showing an improvement of the circuit in FIG. 102having a fuse (resistor) which is disconnected in accordance with atrimming result;

FIG. 106 is a view showing another improvement of the circuit in FIG.102 having a fuse (resistor) which is disconnected in accordance with atrimming result;

FIG. 107 is a view showing still another improvement of the circuit inFIG. 102 having a fuse (resistor) which is disconnected in accordancewith a trimming result;

FIG. 108 is a view showing an example in which trimming fuses(resistors) are arranged at two portions;

FIG. 109 is a sectional view showing an example in which the diffusionlayers of an aging device and trimming transistor are shared with eachother;

FIGS. 110A and 110B are graphs showing the concept of trimming whichignores a thin film edge;

FIGS. 111A and 111B are graphs showing a comparison between temporalchanges in the sum of drain current before and after trimming;

FIG. 112 is a view showing an example of mounting a trimming circuithaving no thin film edge;

FIG. 113 is a view showing another example of mounting a trimmingcircuit having no thin film edge;

FIG. 114 is a view showing a circuit arrangement for explaining areference signal utilization method;

FIG. 115 is a view showing a tuning method using a flash memory;

FIG. 116 is a view showing a tuning method using parallel thin wires;

FIG. 117 is a view showing a tuning method using a diffusion layer;

FIG. 118 is a view showing a tuning method using a gate clamp; and

FIG. 119 is a graph showing the influence of variations in tunnelinsulating film thickness on the gate leakage current.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the present invention will be described in detail belowwith reference to the several views of the accompanying drawing. Thepresent invention is not limited to the following embodiments, and canbe variously modified.

First Embodiment

As shown in FIG. 1, the first embodiment comprises an integrated circuit(LSI) 4 in which a memory area (memory) serving as the first functionalblock 1, a decoder which serves as the second functional block 2 andreads out information from the memory area, and a semiconductor timeswitch (automatic turn-off aging device) 3 which is connected betweenthe memory 1 and the decoder 2 via the signal line 7 and turned off uponthe lapse of a predetermined time are integrated.

As shown in FIG. 1, the aging device 3 is interposed between the memory1 and the decoder 2. In this case, one terminal of the aging device 3 isconnected to the memory 1, and the other terminal is connected to thedecoder 2. The decoder 2 and memory 1 can access each other.

The aging device 3 is turned off upon the lapse of a predetermined time,and the memory 1 and decoder 2 are disconnected from each other. Thedecoder 2 cannot access the memory 1, and the LSI 4 malfunctions. Forexample, when the memory 1 stores a decryption key for decrypting acipher, the decoder 2 cannot read the decryption key stored in thememory 1, and a time limit cipher is implemented.

Second Embodiment

As shown in FIG. 2, the second embodiment comprises an integratedcircuit (LSI) 4 in which an operational area (MPU) 1 serving as thefirst functional block, a decoder 2 serving as the second functionalblock, and a semiconductor time switch (aging device) 3 which isconnected between the MPU 1 and the decoder 2 via the signal line 7 andturned off upon the lapse of a predetermined time are integrated.

As shown in FIG. 2, the aging device 3 is interposed between the MPU 1and the decoder 2. In this case, one terminal of the aging device 3 isconnected to the MPU 1, and the other terminal is connected to thedecoder 2. The MPU 1 and decoder 2 can access each other.

The aging device 3 is turned off upon the lapse of a predetermined time,and the MPU 1 and decoder 2 are disconnected from each other. The MPU 1and decoder 2 cannot access each other, and the LSI 4 malfunctions. Forexample, encryption information decrypted by the MPU 1 cannot be read bythe decoder 2, and a time limit cipher is implemented.

Third Embodiment

As shown in FIG. 3, the third embodiment comprises an integrated circuit(LSI) 4 in which an operational area (MPU) 1 serving as the firstfunctional block, a memory area (memory) 2 serving as the secondfunctional block, and a semiconductor time switch (aging device) 3 whichis connected between the MPU 1 and the memory 2 via the signal line 7and turned off upon the lapse of a predetermined time are integrated.

As shown in FIG. 3, the aging device 3 is interposed between the MPU 1and the memory 2. In this case, one terminal of the aging device 3 isconnected to the MPU 1, and the other terminal is connected to thememory 2. The MPU 1 and memory 2 can access each other.

The aging device 3 is turned off upon the lapse of a predetermined time,and the MPU 1 and memory 2 are disconnected from each other. The MPU 1and memory 2 cannot access each other, and the LSI 4 malfunctions. Forexample, the MPU 1 cannot read a decryption key stored in the memory 2,and a time limit cipher is implemented.

Fourth Embodiment

As shown in FIG. 4, the fourth embodiment comprises an integratedcircuit (LSI) 4 in which a memory area (memory) 1 a and operational area(MPU) 1 b serving as the first functional block, a decoder 2 serving asthe second functional block, and a semiconductor time switch (agingdevice) 3 which is connected between the memory 1 a and MPU 1 b and thedecoder 2 via the signal line 7 and turned off upon the lapse of apredetermined time are integrated.

As shown in FIG. 4, the aging device 3 is interposed between the memory1 a and MPU 1 b and the decoder 2. In this case, one terminal of theaging device 3 is connected to the memory 1 a and MPU 1 b, and the otherterminal is connected to the decoder 2. The memory 1 a and MPU 1 b anddecoder 2 can access each other.

The aging device 3 is turned off upon the lapse of a predetermined time,and the memory 1 a and MPU 1 b and the decoder 2 are disconnected fromeach other. The memory 1 a and MPU 1 b and the decoder 2 cannot accesseach other, and the LSI 4 malfunctions. For example, a decryption keystored in the memory 1 a cannot be read by the decoder 2. Alternatively,a cipher text decrypted by the MPU 1 b using the decryption keys storedin the memory 1 a cannot be read by the decoder 2, and a time limitcipher is implemented.

Fifth Embodiment

As shown in FIG. 5, the fifth embodiment comprises an integrated circuit(LSI) 4 in which a memory area (memory) 1 a, operational area (MPU) 1 b,and decoder 1 c serving as the first functional block, a power supply 2serving as the second functional block, and a semiconductor time switch(aging device) 3 which is connected between the memory 1 a, MPU 1 b, anddecoder 1 c and the power supply 2 via the signal line 7 and turned offupon the lapse of a predetermined time (life time) are integrated.

As shown in FIG. 5, the aging device 3 is interposed between the memory1 a, MPU 1 b, and decoder 1 c and the power supply 2. In this case, oneterminal of the aging device 3 is connected to the memory 1 a, MPU 1 b,and decoder 1 c, and the other terminal is connected to the power supply2. The memory 1 a, MPU 1 b, and decoder 1 c receive power from the powersupply 2.

The aging device 3 is turned off upon the lapse of a predetermined time,and the memory 1 a, MPU 1 b, and decoder 1 c and the power supply 2 aredisconnected from each other. The memory 1 a, MPU 1 b, and decoder 1 cdo not receive any power from the power supply 2, and the LSI 4malfunctions.

In the fifth embodiment, the aging device 3 are connected to the powersupply 2. Note that this is different from the configuration in whichthe functional region 111 with age-based change depicted in FIG. 76 isconnected to a power supply. Therefore, the age-based changecharacteristics of the aging device of this embodiment are notinfluenced by the power supply 2. This applies to the sixth and seventhembodiments as well.

Sixth Embodiment

As shown in FIG. 6, the sixth embodiment comprises an integrated circuit(LSI) 4 in which a memory area (memory) 1 a and operational area (MPU) 1b serving as the first functional block, a power supply 2 serving as thesecond functional block, a 1st semiconductor time switch (aging device)3 a which is connected between the memory 1 a and MPU 1 b and the powersupply 2 via the signal line 7 and turned off upon the lapse of apredetermined time (life time), a decoder 1 c serving as the firstfunctional block, and a 2nd semiconductor time switch (aging device) 3 bwhich is connected between the decoder 1 c and the power supply 2 viathe signal line 7 and turned off upon the lapse of a predetermined time(life time) are integrated. If the life time of the aging device 3 a isdifferent from that of the aging device 3 b, the function of LSI 4 isstepwise lost.

As shown in FIG. 6, the 1st aging device 3 a is interposed between thememory 1 a and MPU 1 b and the power supply 2. In this case, oneterminal of the 1st aging device 3 a is connected to the memory 1 a andMPU 1 b, and the other terminal is connected to the power supply 2. Thememory 1 a and MPU 1 b receive power from the power supply 2. The 2ndaging device 3 b is interposed between the decoder 1 c and the powersupply 2. In this case, one terminal of the 2nd aging device 3 b isconnected to the decoder 1 c, and the other terminal is connected to thepower supply 2. The decoder 1 c receives power from the power supply 2.

The 1st and 2nd aging devices 3 a and 3 b are turned off upon the lapseof a predetermined time, and the memory 1 a and MPU 1 b and the powersupply 2 are disconnected from each other. Also, the decoder 1 c andpower supply 2 are disconnected from each other. The memory 1 a, MPU 1b, and decoder 1 c do not receive any power from the power supply 2, andthe LSI 4 malfunctions.

Seventh Embodiment

As shown in FIG. 7, the seventh embodiment comprises an integratedcircuit (LSI) 4 in which a memory area (memory) 1 a serving as the firstfunctional block, a power supply 2 serving as the second functionalblock, a 1st semiconductor time switch (aging device) 3 a which isconnected between the memory 1 a and the power supply 2 via the signalline 7 and turned off upon the lapse of a predetermined time, a decoder1 c serving as the first functional block, and a 2nd semiconductor timeswitch (aging device) 3 b which is connected between the decoder 1 c andthe power supply 2 via the signal line 7 and turned off upon the lapseof a predetermined time are integrated. Further, an operational area(MPU) 1 b is connected to the memory 1 a via a 3rd aging device 3 c onthe LSI 4.

As shown in FIG. 7, the 1st aging device 3 a is interposed between thememory 1 a and the power supply 2. In this case, one terminal of the 1staging device 3 a is connected to the memory 1 a, and the other terminalis connected to the power supply 2. The memory 1 a receives power fromthe power supply 2. The MPU 1 b is connected to the power supply 2 viathe 3rd aging device 3 c, memory 1 a, and 1st aging device 3 a, andreceives power from the power supply 2. The 2nd aging device 3 b isinterposed between the decoder 1 c and the power supply 2. In this case,one terminal of the 2nd aging device 3 b is connected to the decoder 1c, and the other terminal is connected to the power supply 2. Thedecoder 1 c receives power from the power supply 2.

The 1st, 2nd, and 3rd aging devices 3 a, 3 b, and 3 c are turned offupon the lapse of a predetermined time (life time), and the memory 1 aand MPU 1 b are disconnected from each other. Also, the memory 1 a andMPU 1 b are disconnected from the power supply 2. The decoder 1 c andpower supply 2 are disconnected from each other. The memory 1 a, MPU 1b, and decoder 1 c do not receive any power from the power supply 2, theMPU 1 b and memory 1 a cannot access each other, and the LSI 4malfunctions.

In the above-mentioned embodiments, an automatic turn-off aging device(normally-off type) is used such that an aging device is connectedbetween a plurality of functional blocks, and automatically disconnectsthe functional blocks upon the lapse of a predetermined period (lifetime). To the contrary, an automatic turn-on aging device (normally-ontype) which automatically connects functional blocks upon the lapse of apredetermined period (life time) can be applied to the first to seventhembodiments.

In that case, LSI 4, which has not been functional before thepredetermined time (life time) elapse, recovers the function after thepredetermined time. As mentioned later in the 38th embodiment, it ispossible to realize an aging device rendered “on” only during apredetermined period (for example, τA to τB). In this case, the accessbetween the first functional block 1 and the second functional block 2is made possible only during τA and τB, thereby enabling to set a periodwhen the function of LSI 4 is effective. To the contrary, it is alsopossible to realize an aging device rendered “off” only during apredetermined period (for example, τA to τB). In this case, the accessbetween the first functional block 1 and the second functional block 2is made impossible only during τA and τB, thereby enabling to set aperiod when the function of LSI 4 is ineffective.

Thus, generally speaking, the function of LSI 4 can be changed with thelapse of time by changing the access condition between the firstfunctional block 1 and the second functional block 2 with the lapse oftime. Moreover, the access condition abovementioned can be an intensityof the signal on the signal line 7 between the first functional block 1and the second functional blocks 2. This means that the intensity of thesignal on the signal line 7 changes with the lapse of time. For example,if the first functional block 1 is a signal generator and the secondfunctional block is a signal sensing part, the signal sensed at thesignal sensing part is changed with the lapse of time owing to the agingdevice.

Thus, according to the aging device of the present embodiment, theaccess condition between the first functional block 1 and the secondfunctional block 2 can be changed with the laps of time. The age-basedchange can be optionally determined by a user, or can be set as in abinary fashion, that is, “on” to “off”, or “off” to “on”. From thispoint of view, the aging device of this invention can be regarded as anage-based change device (precisely explained later). An aging circuit inwhich a plurality of the aging devices are connected in parallel can beused as a time switch (precisely explained later).

A time limit function utilization apparatus of bridging type, that is,in which a semiconductor time switch is interposed between a firstfunctional block and a second functional block, has been explained.Hereinafter, in the 8th to 13th embodiments, a time limit functionutilization apparatus of clamping type, that is, in which asemiconductor time switch is connected to the signal line between afirst functional block and a second functional block, will be explained.To prevent the duplicated explanation, in the 8th to 13th embodiments,only an automatic turn-on type (normally-on type) aging device isexemplified. However, an automatic turn-off type aging device can beused instead.

More specifically, in the eighth to 13th embodiments, the firstfunctional block connected to an input/output terminal and the secondfunctional block as an internal circuit which stores information or afunction are connected via a signal line. An automatic turn-on(normally-on type) aging device which is turned on upon the lapse of apredetermined time is connected between the signal line and ground,another signal line, a power supply line, or another internal circuit(third functional block).

An input/output terminal 5 in the eighth to 13th embodiments can beconnected to the first functional block in the first to seventhembodiments. An internal circuit 6 is equivalent to the secondfunctional block. A plurality of functional blocks may be connected tothe input/output terminal 5 as the first functional blocks and aplurality of the internal circuits 6 may be provided as the secondfunctional blocks.

Eighth Embodiment

In the eighth embodiment, as shown in FIG. 8, the first functional block1 and the second functional block 2 are connected via a signal line 7.An automatic turn-on aging device 3X which is turned on upon the lapseof a predetermined time is connected between the signal line 7 andground (GND) (which may be another signal line or a power supply line).

With this arrangement, the potential of the signal line 7 is clamped tothe potential of GND (or another signal line or a power supply line),and no signal propagates between the first functional block 1 and thesecond functional block 2. This function can set time limit informationor a time limit function which is stored in the second functional block2.

In this embodiment, an automatic turn-off device can be used instead ofthe automatic turn-on aging device 3X.

Ninth Embodiment

In the ninth embodiment, as shown in FIG. 9, a first functional block 1and a second functional block (1st internal circuit) 2 are electricallyconnected at first. Upon the lapse of a predetermined time, an automaticturn-on aging device 3X is turned on to electrically connect aninput/output terminal (to be referred to an I/O terminal hereinafter) 5to a third functional block 35 (2nd internal circuit) 35. The firstfunctional block 1 is connected to the I/O Terminal 5. This applies adisturbance to a signal between the 2nd functional block (1st internalcircuit) 2 and the I/O terminal 5, inhibiting the use of information ora function which is stored in the 2nd functional block (1st internalcircuit) 2 upon the lapse of a predetermined time.

Alternatively, a signal from the third functional block (2nd internalcircuit) 35 may be added to a signal from the second functional block(1st internal circuit) 2 to output the sum upon the lapse of apredetermined time. The same signal may be input from the firstfunctional block 1 to the second and third functional blocks 2 and 35via I/O terminal 5 upon the lapse of a predetermined time.

In this embodiment, an automatic turn-off device can be used instead ofthe automatic turn-on aging device 3X.

10th Embodiment

In the 10th embodiment, as shown in FIG. 10, an off-type switch 8 isconnected between an I/O terminal 5 to which a first functional block isconnected and a second functional block (1st internal circuit) 2, and anon-type switch 9 is connected between the I/O terminal 5 and a thirdfunctional block (2nd internal circuit) 35. An aging block 10 isconnected to the off-type switch 8 and on-type switch 9. Upon the lapseof a predetermined time, the off-type switch 8 is turned off from an onstate by an output from the automatic turn-on aging block 10, and theon-type switch 9 is turned on from an off state.

The aging block 10 is essentially same as the aging device 3X, but somecircuit elements are added to the aging device to stabilize operation,which will be explained in the 36th embodiment.

With this circuit arrangement, a signal propagates between the I/Oterminal 5 and the third functional block (2nd internal circuit) 35 uponthe lapse of a predetermined time. That is, information or a function inthe internal circuit when viewed from the I/O terminal 5 can beautomatically switched upon the lapse of a predetermined time. Thefunctional blocks (internal circuits) 2 and 35 may share part of thecircuits.

In this embodiment, it is possible to change the off-type switch 8 to anon-type switch, the on-type switch 9 to an off-switch, and the automaticturn-on aging block to an automatic turn-off aging block. In otherwords, it is possible to exchange the polarity of a switch or an agingblock “on” to “off”, or “off” to “on”.

11th Embodiment

As shown in FIG. 11, the 11th embodiment adopts N (N is a naturalnumber) internal circuits corresponding to a second functional block,(N−1) automatic turn-on aging blocks, (N−1) off-type switches, and (N−1)on-type switches. An nth (n is a natural number: 1≦n≦N) off-type switch8 _(n) is connected to an nth internal circuit 6 _(n). An nth on-typeswitch 9 _(n) is connected between the nth off-type switch 8 _(n) and an(n+1)th off-type switch 8 _((n+1)). The output line of an nth agingblock 10 _(n) is connected between the nth off-type switch 8 _(n) andthe nth on-type switch 9 _(n). Aging blocks 10 _(n) operate sequentiallyin numerical order of the first, second, third blocks and so on, andturns off a corresponding off-type switch from an on state and on acorresponding on-type switch from an off state.

With this circuit arrangement, information or a function in the internalcircuit which can be used from the I/O terminal 5 to which a firstfunctional block is connected can be changed stepwise. The internalcircuits 6 may share part of the circuits.

In this embodiment, it is possible to change the off-type switch 8 _(n)to an on-type switch, the on-type switch 9 _(n) to an off-switch, andthe automatic turn-on aging block to an automatic turn-off aging block.In other words, it is possible to exchange the polarity of a switch oran aging block “on” to “off”, or “off” to “on”.

12th Embodiment

In the 12th embodiment, as shown in FIG. 12, an automatic turn-off agingblock 36 is connected between an I/O terminal 5 to which a firstfunctional block is connected and a second functional block (1stinternal circuit) 2, and an automatic turn-on aging block 10 isconnected between the I/O terminal 5 and the third functional block (2ndinternal circuit) 35. Upon the lapse of a predetermined time, theautomatic turn-off aging block 36 is turned off, and the automaticturn-on aging block 10 is turned on.

With this circuit arrangement, a signal propagates between the I/Oterminal 5 and the third functional block (2nd internal circuit) 35 uponthe lapse of a predetermined time. That is, information or a function inthe internal circuit when viewed from the I/O terminal 5 can beautomatically switched upon the lapse of a predetermined time.

In the circuit arrangement of the 10th embodiment (FIG. 10), the secondand third functional blocks 2 and 35 are simultaneously switched uponthe lapse of a predetermined time. In the 12th embodiment, informationor a function in the third functional block 35 can be used apredetermined time after the second functional block becomesunavailable. The internal circuits may share part of the circuits.

In this embodiments, the switch polarity of the automatic turn-off agingblock 36 _(n) and the automatic turn-on aging block 10 n may bereversed.

13th Embodiment

As shown in FIG. 13, the 13th embodiment adopts N (N is a naturalnumber) internal circuits, (N−1) automatic turn-off aging blocks, and(N−1) automatic turn-on aging blocks. An nth (n is a natural number:1≦n≦N) automatic turn-off aging block 36 _(n) is connected to an nthinternal circuit. An nth automatic turn-on aging block is connectedbetween the nth automatic turn-off aging block and an (n+1)th automaticturn-off aging block.

The automatic turn-off aging blocks 36 _(n) and automatic turn-on agingblocks 10 _(n) change (operate) sequentially in numerical order of thefirst, second, third blocks and so on. With this circuit arrangement,information or a function in the internal circuit which can be used froman I/O terminal 5 can be changed stepwise after a predetermined time.The internal circuits may share part of the circuits.

A detailed structure and operation method of the aging device will beexplained in the 14th to 24th embodiments taking an automatic turn-offaging block as an example.

14th Embodiment

FIG. 14 is a sectional view showing an aging device according to the14th embodiment. In the aging device, a gate insulating film 12 isformed on an n-type semiconductor substrate 11, and a gate electrode 13is formed on the gate insulating film 12. A p⁺-type source region 14 andp⁺-type drain region 15 are so formed as to interpose the gateinsulating film 12. The n-type layer of a p-n junction 16 is connectedto the gate electrode 13 of the pMOSFET, and the p-type layer isconnected to an external terminal, forming an aging device.

The source region 14 of the aging device is connected to a firstfunctional block 1. The drain region 15 is connected to a secondfunctional block 2.

In this aging device, as shown in FIG. 15, a voltage V1<0 is applied tothe p-type layer of the p-n junction 16.

As shown in FIG. 16, electrons flow from the p-type region to the n-typeregion by band-to-band tunneling (BBT) or avalanche breakdown of the pnjunction. As a result, electrons are injected into the gate electrode13. After electrons are injected, the voltage V1 applied to the p-typelayer of the p-n junction 16 is stopped, or the terminal is physicallyremoved, and then followed by packaging.

Even if the voltage V1 is 0 V, the channel is open, as shown in FIG. 17.The source region 14 and drain region 15 of the aging device arerendered conductive.

As shown in FIG. 18, redundant electrons accumulated in the gateelectrode 13 escape from the n-type layer to p-type layer of the p-njunction 16 owing to the diffusion current, and the field applied to thechannel weakens over time. Leakage of accumulated electrons may occureven in direct tunneling (direct tunnel gate leakage) between the gateelectrode 13 and the channel or between the gate electrode 13 and thediffusion layers of the source region 14 and drain region 15 for asufficiently thin gate insulating film 12. When the inversion layerdisappears, no current flows between the source region 14 and drainregion 15. That is, the aging device is turned off.

The expiration date (life time) of the aging device, i.e., the time atwhich the aging device is turned off from an on state is proportional tothe amount of electrons accumulated in the gate electrode 13, andinversely proportional to the diffusion current and direct tunnel gateleakage. The expiration date can be set within a predetermined range byadjusting the electron injection time, the gate volume, the junctionarea, the impurity concentration at the junction, the insulating filmthickness, the channel area, the extension region, and the like.

FIG. 19 shows a layered structure for implementing the aging device ofthe 14th embodiment at low cost. As shown in FIG. 19, a p-n junction 32is vertically formed on the gate insulating film 12, manufacturing theaging device of the 14th embodiment at low cost.

15th Embodiment

FIG. 20 is a sectional view showing an aging device according to the15th embodiment. In the aging device, a gate insulating film 12 isformed on a p-type semiconductor substrate 11, and a gate electrode 13is formed on the gate insulating film 12. An n⁺-type source region 14and n⁺-type drain region 15 are so formed as to interpose the gateinsulating film 12. The p-type layer of a p-n junction 16 is connectedto the gate electrode 13, and the n-type layer is connected to anexternal terminal, forming an aging device.

The source region 14 of the aging device is connected to a firstfunctional block 1. The drain region 15 is connected to a secondfunctional block 2.

In this aging device, as shown in FIG. 21, a voltage V1>0 is applied tothe n-type layer of the p-n junction 16.

As shown in FIG. 22, holes flow from the n-type region to the p-typeregion by band-to-band tunneling (BBT) or avalanche breakdown. As aresult, holes are injected into the gate electrode 13. After holes areinjected, the voltage V1 applied to the n-type layer of the p-n junction16 is stopped, or the terminal is physically removed, and then followedby packaging.

Even if the voltage V1 is 0 V, the channel is open, as shown in FIG. 23.The aging device is turned on.

As shown in FIG. 24, redundant holes accumulated in the gate electrode13 escape from the p-type layer to n-type layer of the p-n junction 16owing to the diffusion current, and the field applied to the channelweakens over time. Leakage of accumulated holes may occur even in directtunneling (direct tunnel gate leakage) between the gate electrode 13 andthe channel or between the gate electrode 13 and the diffusion layers ofthe source region 14 and drain region 15 for a sufficiently thin gateinsulating film 12. When the inversion layer disappears, no currentflows between the source region 14 and drain region 15. That is, theaging device is turned off.

The expiration date (life time) of the aging device, i.e., the time atwhich the aging device is turned off is proportional to the amount ofpositive charges accumulated in the gate electrode 13, and inverselyproportional to the diffusion current and direct tunnel gate leakagecurrent. The expiration date can be set within a predetermined range byadjusting the hole injection time, the gate volume, the junction area,the junction concentration, the insulating film thickness, the channelarea, the extension region, and the like.

FIG. 25 shows a layered structure for implementing the aging device ofthe 15th embodiment at low cost. As shown in FIG. 25, a p-n junction 33is vertically formed on the gate insulating film 12, manufacturing theaging device of the 15th embodiment at low cost.

16th Embodiment

FIG. 26 is a sectional view showing an aging device according to the16th embodiment. In the aging device, a gate insulating film 12 isformed on a p-type semiconductor substrate 11, and a gate electrode 13is formed on the gate insulating film 12. An n⁺-type source region 14and n⁺-type drain region 15 are so formed as to interpose the gateinsulating film 12. One p-type layer of a pnp junction 17 is connectedto the gate electrode 13, the other p-type layer is connected to anexternal terminal, and the n-type layer is connected to another externalterminal, forming an aging device.

The source region 14 of the aging device is connected to a firstfunctional block 1. The drain region 15 is connected to a secondfunctional block 2.

In this aging device, a voltage V1>0 is applied to the other p-typelayer of the pnp junction 17, and a voltage V2<0 is applied to then-type layer. As a result, as shown in FIG. 26, holes flow from theright p-type region to the left p-type region via the n-type region, andare injected into the gate electrode 13. After holes are injected, thevoltages V1 and V2 applied to the p- and n-type layers of the pnpjunction 17 are stopped, or the terminals are physically removed, andthen followed by packaging.

Even if the voltages V1 and V2 are 0 V, the channel is open, as shown inFIG. 27. The aging device is turned on.

Redundant holes accumulated in the gate electrode 13 escape from onep-type layer, which is on a gate side to the other p-type layer of thepnp junction 17 via the n-type layer owing to the diffusion current, asshown in FIG. 27, and the field applied to the channel weakens overtime.

Leakage of accumulated holes may occur even in the direct tunnel gateleakage identical to that in the 14th and 15th embodiments. When theinversion layer disappears, no current flows between the source region14 and drain region 15. That is, the aging device is turned off. Theexpiration date (life time) of the aging device can be adjustedsimilarly to the 15th embodiment.

Similar to the 14th or 15th embodiment, the aging device of the 16thembodiment can also be implemented at low cost by vertically forming thepnp junction 17 on the gate electrode 13.

17th Embodiment

FIG. 28 is a sectional view showing an aging device according to the17th embodiment. In the aging device, a gate insulating film 12 isformed on a p-type semiconductor substrate 11, and a gate electrode 13is formed on the gate insulating film 12. An n⁺-type source region 14and n⁺-type drain region 15 are so formed as to interpose the gateinsulating film 12. One n⁺-type layer of an n⁺nn⁺ junction 18 isconnected to the gate electrode 13, the other n⁺-type layer is connectedto an external terminal, and the n-type layer is connected to anotherexternal terminal, forming an aging device.

The source region 14 of the aging device is connected to a firstfunctional block 1. The drain region 15 is connected to a secondfunctional block 2.

In this aging device, a voltage V1>0 is applied to the other n⁺-typelayer of the n⁺nn⁺ junction 18, and a voltage V2>0 is applied to then-type layer.

As shown in FIG. 28, electrons are removed from the gate electrode 13via the n⁺nn⁺ junction 18 to positively charge the gate electrode 13.Thereafter, the voltages V1 and V2 applied to the n⁺- and n-type layersof the n⁺nn⁺ junction 18 are stopped, or the terminals are physicallyremoved, and then followed by packaging.

Even if the voltages V1 and V2 are 0 V, the channel is open, and theaging device is turned on.

Electrons flows in the gate electrode 13 via the n⁺nn⁺ junction 18 bythe diffusion current by the amount of electrons which have been removedfrom the gate electrode 13. Hence, the field applied to the channelweakens over time. Injection of electrons may occur even in directtunneling (direct tunnel gate leakage) between the gate electrode 13 andthe channel or between the gate electrode 13 and the diffusion layers ofthe source region 14 and drain region 15 for a sufficiently thin gateinsulating film 12. When the inversion layer disappears, no currentflows between the source region 14 and drain region 15. That is, theaging device is turned off.

The expiration date (life time) of the aging device, i.e., the time atwhich the aging device is turned off is proportional to the amount ofelectrons removed from the gate electrode 13, and inversely proportionalto the diffusion current and direct tunnel gate leakage. The expirationdate can be set within a predetermined range by adjusting the electronremoval time, the gate volume, the junction area, the impurityconcentration at the junction, the insulating film thickness, thechannel area, the extension region, and the like.

Similar to the 14th or 15th embodiment, the aging device of the 17thembodiment can also be implemented at low cost by vertically forming then⁺nn⁺ junction 18 on the gate electrode 13.

18th Embodiment

FIG. 29 is a sectional view showing an aging device according to the18th embodiment. In the aging device, a gate insulating film 12 isformed on a p-type semiconductor substrate 11, and a gate electrode 13is formed on the gate insulating film 12. An n⁺-type source region 14and n⁺-type drain region 15 are so formed as to interpose the gateinsulating film 12. One p⁺-type layer of a p⁺pp⁺ junction 19 isconnected to the gate electrode 13, the other p⁺-type layer is connectedto an external terminal, and the p-type layer is connected to anotherexternal terminal, forming an aging device.

The source region 14 of the aging device is connected to a firstfunctional block 1. The drain region 15 is connected to a secondfunctional block 2.

In this aging device, a voltage V1>0 is applied to the other p⁺-typelayer of the p⁺pp⁺ junction 19, and a voltage V2<0 is applied to thep-type layer.

Holes are injected into the gate electrode 13 via the p⁺pp⁺ junction 19to positively charge the gate electrode 13. After that, the voltages V1and V2 applied to the p⁺- and p-type layers of the p⁺pp⁺ junction 19 arestopped, or the terminals are physically removed, and then followed bypackaging.

Even if the voltages V1 and V2 are 0 V, the channel is open, and theaging device is turned on.

As shown in FIG. 30, holes are removed from the gate electrode 13 viathe p⁺pp⁺ junction 19 by the diffusion current, and the field applied tothe channel weakens over time.

Removal of holes may occur even in the direct tunnel gate leakageidentical to that in the 14th and 15th embodiments. When the inversionlayer disappears, no current flows between the source region 14 anddrain region 15. That is, the aging device is turned off. The expirationdate (life time) of the aging device can be adjusted similarly to the15th embodiment.

Similar to the 14th or 15th embodiment, the aging device of the 18thembodiment can also be implemented at low cost by vertically forming thep⁺pp⁺ junction 19 on the gate electrode 13.

19th Embodiment

FIG. 31 is a sectional view showing an aging device according to the19th embodiment. In the aging device, a gate insulating film 12 isformed on a p-type semiconductor substrate 11, and a gate electrode 13is formed on the gate insulating film 12. An n⁺-type source region 14and n⁺-type drain region 15 are so formed as to interpose the gateinsulating film 12. One n-type layer of an npn junction 20 is connectedto the gate electrode 13, the other n-type layer is connected to anexternal terminal, and the p-type layer is connected to another externalterminal, forming an aging device.

The source region 14 of the aging device is connected to a firstfunctional block 1. The drain region 15 is connected to a secondfunctional block 2.

In this aging device, a voltage V1>0 is applied to the other n-typelayer of the npn junction 20, and a voltage V2>0 is applied to thep-type layer.

As shown in FIG. 31, electrons are removed from the gate electrode 13via the npn junction 20 to positively charge the gate electrode 13.Thereafter, the voltages V1 and V2 applied to the n- and p-type layersof the npn junction 20 are stopped, or the terminals are physicallyremoved, and then followed by packaging.

Even if the voltages V1 and V2 are 0 V, the channel is open, and theaging device is turned on.

As shown in FIG. 32, electrons are injected into the gate electrode 13via the npn junction 20 by the diffusion current by the amount ofelectrons which have been removed from the gate electrode 13.Accordingly, the field applied to the channel weakens over time.

Injection of electrons may occur even in the direct tunnel gate leakagesimilar to that in the 17th embodiment. When the inversion layerdisappears, no current flows between the source region 14 and drainregion 15. That is, the aging device is turned off. The expiration date(life time) of the aging device can be adjusted similarly to the 17thembodiment.

Similar to the 14th or 15th embodiment, the aging device of the 19thembodiment can also be implemented at low cost by vertically forming thenpn junction 20 on the gate electrode 13.

20th Embodiment

FIG. 33 is a sectional view showing an aging device according to the20th embodiment. In the aging device, a gate insulating film 12 isformed on a p-type semiconductor substrate 11, and a gate electrode 13is formed on the gate insulating film 12. An n⁺-type source region 14and n⁺-type drain region 15 are so formed as to interpose the gateinsulating film 12. The n-type silicon layer of a metal/n-type siliconSchottky junction 21 is connected to the gate electrode 13, and themetal layer is connected to an external terminal, forming an agingdevice.

The source region 14 of the aging device is connected to a firstfunctional block 1. The drain region 15 is connected to a secondfunctional block 2.

In this aging device, a voltage V1>0 is applied to the metal layer ofthe Schottky junction 21.

Electrons are removed from the gate electrode 13 via the Schottkyjunction 21 to positively charge the gate electrode 13. Thereafter, thevoltage V1 applied to the metal layer of the Schottky junction 21 isstopped, or the terminal is physically removed, and then followed bypackaging.

Even if the voltage V1 is 0 V, the channel is open, and the aging deviceis turned on.

Electrons are injected into the gate-electrode 13 via the Schottkyjunction 21 by Schottky tunneling of electrons by the amount ofelectrons which have been removed from the gate electrode 13.Accordingly, the field applied to the channel weakens over time.

Injection of electrons may occur even in the direct tunnel gate leakageidentical to that in the 17th embodiment. When the inversion layerdisappears, no current flows between the source region 14 and drainregion 15. That is, the aging device is turned off. The expiration date(life time) of the aging device can be adjusted similarly to the 17thembodiment.

FIG. 34 shows a layered structure for implementing the aging device ofthe 20th embodiment at low cost. As shown in FIG. 34, a Schottkyjunction 34 is vertically formed on the gate insulating film 12,manufacturing the aging device of the 20th embodiment at low cost.

Use of Schottky tunneling as charge leakage means enables to suppressthe temperature dependency of a life time.

21st Embodiment

FIG. 35 is a sectional view showing an aging device according to the21st embodiment. In the aging device, a gate insulating film 12 isformed on an n-type semiconductor substrate 11, and a gate electrode 13is formed on the gate insulating film 12. A p⁺-type source region 14 andp⁺-type drain region 15 are so formed as to interpose the gateinsulating film 12. The p-type silicon layer of a metal/p-type siliconSchottky junction 22 is connected to the gate electrode 13 of thepMOSFET, and the metal layer is connected to an external terminal,forming an aging device.

The source region 14 of the aging device is connected to a firstfunctional block 1. The drain region 15 is connected to a secondfunctional block 2.

In this aging device, a voltage V1<0 is applied to the metal layer ofthe Schottky junction 22.

Holes are then extracted from the gate electrode 13 via the Schottkyjunction 22 to negatively charge the gate electrode 13. Thereafter, thevoltage V1 applied to the metal layer of the Schottky junction 22 isstopped, or the terminal is physically removed, and then followed bypackaging.

Even if the voltage V1 is 0 V, the channel is open, and the aging deviceis turned on.

Holes are injected into the gate electrode 13 via the Schottky junction22 by Schottky tunneling of holes by the amount of holes which have beenremoved from the gate electrode 13, and the field applied to the channelweakens over time.

Injection of holes (removal of electrons) may occur even in the directtunnel gate leakage identical to that in the 14th embodiment. When theinversion layer disappears, no current flows between the source region14 and drain region 15. That is, the aging device is turned off. Theexpiration date (life time) of the aging device can be adjustedsimilarly to the 14th embodiment.

FIG. 36 shows a layered structure for implementing the aging device ofthe 21st embodiment at low cost. As shown in FIG. 36, a Schottkyjunction 35 is vertically formed on the gate 12, manufacturing the agingdevice of the 21st embodiment at low cost.

22nd Embodiment

FIG. 37 is a sectional view showing an aging device according to the22nd embodiment. In the aging device, a gate insulating film 12 isformed on a p-type semiconductor substrate 11, and a gate electrode 13is formed on the gate insulating film 12. An n⁺-type source region 14and n⁺-type drain region 15 are so formed as to interpose the gateinsulating film 12. The n⁺-type source region of an nMOSFET 23 isconnected to the gate electrode 13, and the gate and n⁺-type drainregion are connected to external terminals, forming an aging device.

The source region 14 of the aging device is connected to a firstfunctional block 1. The drain region 15 is connected to a secondfunctional block 2.

In this aging device, a voltage V2>0 is applied to the gate of thenMOSFET 23, and a voltage V1>0 is applied to the n⁺-type drain region.

Electrons are removed from the gate electrode 13 via the nMOSFET 23 topositively charge the gate electrode 13. The gate voltage V2 to thenMOSFET 23 is stopped, and the drain voltage V1 is stopped.Alternatively, the terminals are physically removed, and then followedby packaging.

Even if the voltages V1 and V2 are 0 V, the source region 14 and drainregion 15 are rendered conductive, and the aging device is turned on.

Electrons are injected into the gate electrode 13 via the nMOSFET 23 bythe leakage current, and the field applied to the channel weakens overtime. Injection of electrons may occur even in direct tunneling (directtunnel gate leakage) between the gate electrode 13 and the channel orbetween the gate electrode 13 and the diffusion layers of the sourceregion 14 and drain region 15 for a sufficiently thin gate insulatingfilm 12. When the inversion layer disappears, no current flows betweenthe source region 14 and drain region 15. That is, the aging device isturned off.

The expiration date (life time) of the aging device can be adjustedsimilarly to the 17th embodiment. The expiration date can also be setwithin a predetermined range by adjusting the nMOSFET gate width, thegate length, the impurity concentration in the diffusion layer, thechannel concentration, the insulating film thickness, the extensionregion, and the like.

Use of Schottky tunneling as charge leakage means enables to suppressthe temperature dependency of a life time.

23rd Embodiment

FIG. 38 is a sectional view showing an aging device according to the23rd embodiment. In the aging device, a gate insulating film 12 isformed on a p-type semiconductor substrate 11, and a gate electrode 13is formed on the gate insulating film 12. An n⁺-type source region 14and n⁺-type drain region 15 are so formed as to interpose the gateinsulating film 12. The p⁺-type source region of a PMOSFET 24 isconnected to the gate electrode 13, and the gate and p⁺-type drainregion are connected to external terminals, forming an aging device.

The source region 14 of the aging device is connected to a firstfunctional block 1. The drain region 15 is connected to a secondfunctional block 2.

In this aging device, a voltage V2<0 is applied to the gate of thepMOSFET 24, and a voltage V1>0 is applied to the p⁺-type drain region.

Holes are injected into the gate electrode 13 via the pMOSFET 24 topositively charge the gate electrode 13. The gate voltage V2 to thePMOSFET 24 is stopped, and the drain voltage V1 is stopped.Alternatively, the terminals are physically removed, and then followedby packaging.

Even if the voltages V1 and V2 are 0 V, the source region 14 and drainregion 15 are rendered conductive, and the aging device is turned on.

Holes leak from the gate electrode 13 via the pMOSFET 24 by the leakagecurrent, and the field applied to the channel weakens over time. Leakageof holes may occur even in direct tunneling (direct tunnel gate leakageof holes) between the gate electrode 13 and the channel or between thegate electrode 13 and the diffusion layers of the source region 14 anddrain region 15 for a sufficiently thin gate insulating film 12. Whenthe inversion layer disappears, no current flows between the sourceregion 14 and drain region 15. That is, the aging device is turned off.

The expiration date (life time) of the aging device can be adjustedsimilarly to the 15th embodiment. The expiration date can also be setwithin a predetermined range by adjusting the gate width of the pMOSFET24, the gate length, the impurity concentration in the diffusion layer,the channel concentration, the insulating film thickness, the extensionregion, and the like.

24th Embodiment

FIG. 39 is a sectional view showing an aging device. In the agingdevice, a gate insulating film 12 is formed on an n-type semiconductorsubstrate 11, and a gate electrode 13 is formed on the gate insulatingfilm 12. A p⁺-type source region 14 and p⁺-type drain region 15 are soformed as to interpose the gate insulating film 12. The n⁺-type sourceregion of an nMOSFET 25 is connected to the gate electrode 13 of thepMOSFET, and the gate and n⁺-type drain region are connected to externalterminals, forming an aging device.

The source region 14 of the aging device is connected to a firstfunctional block 1. The drain region 15 is connected to a secondfunctional block 2.

In this aging device, a voltage V2>0 is applied to the gate of thenMOSFET 25, and a voltage V1<0 is applied to the n⁺-type source region.

Electrons are injected into the gate electrode 13 via the nMOSFET 25 tonegatively charge the gate electrode 13. The gate voltage V2 to thenMOSFET 25 is stopped, and the drain voltage V1 is stopped.Alternatively, the terminals are physically removed, and then followedby packaging.

Even if the voltages V1 and V2 are 0 V, the source region 14 and drainregion 15 are rendered conductive, and the aging device is turned on.

Electrons are removed from the gate electrode 13 via the nMOSFET 25 bythe leakage current, and the field applied to the channel weakens overtime. Removal of electrons may occur even in the direct tunnel gateleakage identical to that in the 14th embodiment. When the inversionlayer disappears, no current flows between the source region 14 anddrain region 15. That is, the aging device is turned off.

The expiration date (life time) of the aging device can be determinedsimilarly to the 14th embodiment. The expiration date can also be setwithin a predetermined range by adjusting the gate width of the nMOSFET25, the gate length, the impurity concentration in the diffusion layer,the channel concentration, the insulating film thickness, and the like.

25th Embodiment

FIG. 40 is a sectional view showing an aging device according to the25th embodiment. In the aging device, a gate insulating film 12 isformed on an n-type semiconductor substrate 11, and a gate electrode 13is formed on the gate insulating film 12. A p⁺-type source region 14 andp⁺-type drain region 15 are so formed as to interpose the gateinsulating film 12. The p⁺-type source region of a pMOSFET 26 isconnected to the gate electrode 13, and the gate and p⁺-type drainregion are connected to external terminals, forming an aging device.

The source region 14 of the aging device is connected to a firstfunctional block 1. The drain region 15 is connected to a secondfunctional block 2.

In this aging device, a voltage V2<0 is applied to the gate of thePMOSFET 26, and a voltage V1<0 is applied to the p⁺-type source region.

Holes are removed from the gate electrode 13 via the pMOSFET 26 tonegatively charge the gate electrode 13. The gate voltage V2 to thepMOSFET 26 is stopped, and the drain voltage V1 is stopped.Alternatively, the terminals are physically removed, and then followedby packaging.

Even if the voltages V1 and V2 are 0 V, the source region 14 and drainregion 15 are rendered conductive, and the aging device is turned on.

Holes are injected into the gate electrode 13 via the pMOSFET 26 by theleakage current, and the field applied to the channel weakens over time.Injection of holes may occur even in direct tunneling of holes (directtunnel gate leakage) between the gate electrode 13 and the channel orbetween the gate electrode 13 and the diffusion layers of the sourceregion 14 and drain region 15 for a sufficiently thin gate insulatingfilm 12. When the inversion layer disappears, no current flows betweenthe source region 14 and drain region 15. That is, the aging device isturned off.

The expiration date (life time) of the aging device, i.e., the time atwhich the aging device is turned off is proportional to the amount ofholes removed from the gate electrode 13, and inversely proportional tothe leakage current and the direct tunneling gate leakage. Theexpiration date can be set within a predetermined range by adjusting thehole removal time, the gate volume, the junction area, the impurityconcentration at the junction, the insulating film thickness, thechannel area, the extension region, and the like.

The expiration date can also be set within a predetermined range byadjusting the gate width of the pMOSFET 26, the gate length, theimpurity concentration in the diffusion layer, the channelconcentration, the insulating film thickness, the extension region, andthe like.

26th Embodiment

FIG. 41 is a sectional view showing an aging device according to the26th embodiment. In the aging device, a gate insulating film 12 isformed on an n-type semiconductor substrate 11, and a floating gate 27is formed on the gate insulating film 12. An insulating film 28 isformed on the floating gate 27, and a control gate 29 is formed on theinsulating film 28. A p⁺-type source region 14 and p⁺-type drain region15 are so formed as to interpose the gate insulating film 12. Thecontrol gate 29 is connected to an external terminal, forming an agingdevice.

The source region 14 of the aging device is connected to a firstfunctional block 1. The drain region 15 is connected to a secondfunctional block 2.

FIG. 42 is a sectional view for explaining a method of injectingelectrons into the floating gate 27 of the aging device.

A positive voltage V1>0 is applied to the control gate 29, and electronsare injected from the n-type semiconductor substrate 11 into thefloating gate 27 by FN tunneling.

FIG. 43 is a sectional view showing another method of injectingelectrons into the floating gate 27.

A negative voltage V1<0 is applied to the control gate 29, and electronsare injected from the control gate 29 into the floating gate 27 by FNtunneling.

If the voltage V1 applied to the control gate 29 is high enough to causeFN tunneling, electrons can be injected into the floating gate 27regardless of the polarity.

If the gate insulating film 12 between the floating gate 27 and thesemiconductor substrate 11 is sufficiently thin, or the insulating film28 between the control gate 29 and the floating gate 27 is sufficientlythin, electrons can be injected by direct tunneling.

Thereafter, the voltage V1 to the control gate 29 is stopped, or theterminal is physically removed, and then followed by packaging.

Even if the voltage V1 is 0 V, the source region 14 and drain region 15are rendered conductive, and the aging device is turned on.

As shown in FIGS. 44 and 45, electrons are removed from the floatinggate 27 to the semiconductor substrate 11, source region 14, drainregion 15, and control gate 29 by the leakage current of directtunneling. Accordingly, the field applied to the channel weakens overtime. When the inversion layer disappears, no current flows between thesource region 14 and drain region 15. That is, the aging device isturned off.

If the gate insulating film 12 between the floating gate 27 and thesemiconductor substrate 11 is thinner than the insulating film 28between the floating gate 27 and the control gate 29, electron emissionshown in FIG. 44 becomes prominent. If the insulating film 28 betweenthe floating gate 27 and the control gate 29 is thinner than the gateinsulating film 12 between the floating gate 27 and the semiconductorsubstrate 11, electron emission shown in FIG. 45 becomes prominent. Ifthe insulating film 28 is as thin as the gate insulating film 12,electron emission is given by the sum of two leakage currents.

The expiration date (life time) of the aging device, i.e., the time atwhich the aging device is turned off is proportional to the amount ofelectrons accumulated in the floating gate 27, and inverselyproportional to the leakage current. The expiration date can be adjustedwithin a predetermined range by adjusting the electron injection time,the gate volume, the gate area, the impurity concentration, theinsulating film thickness, the channel area, the extension region, andthe like.

An aging device can also be implemented by a p-type semiconductorsubstrate instead of the n-type semiconductor substrate, and the sourceand drain of n-type diffusion layers instead of the source and drain ofp-type diffusion layers. In this case, the operation principle andstructure are the same except that positive charges (realized by FNtunnel emission of electrons) are first injected into the floating gateand positive charges (realized by direct tunnel injection of electrons)are emitted.

27th Embodiment

FIG. 46A is a schematic perspective view showing an aging deviceaccording to the 27th embodiment. In the aging device, a gate insulatingfilm 12 is formed on an n-type semiconductor substrate 11, and afloating gate 27 is formed on the gate insulating film 12. A controlgate 29 is formed on the n-type semiconductor substrate 11 so as to beadjacent to the floating gate 27.

An insulating film is formed between the floating gate 27 and thecontrol gate 29, but is not illustrated in FIG. 46A.

A p⁺-type source region 14 and p⁺-type drain region 15 are so formed asto interpose the gate insulating film 12. The control gate 29 isconnected to an external terminal, forming an aging device.

The source region 14 of the aging device is connected to a firstfunctional block 1. The drain region 15 is connected to a secondfunctional block 2.

FIG. 46B is a plan view of the aging device when viewed from the top.

As shown in FIG. 46B, the control gate 29 is formed at a positionopposite to the short side of the floating gate 27. An insulating film28 (not shown in FIG. 46A) is formed between the control gate 29 and thefloating gate 27. The control gate 29 is arranged at a position spacedapart from the source region 14 and drain region 15 which are diffusionlayers. This arrangement can reduce the influence of the control gate 29on the diffusion layers.

The time at which the aging device is turned off can be changed byforming devices having different gate widths (short sides) on a singlesubstrate.

FIG. 47 is a plan view for explaining a method of injecting electronsinto the floating gate 27 of the aging device.

A negative voltage V1<0 is applied to the control gate 29, and electronsare injected from the control gate 29 into the floating gate 27 by FNtunneling.

If the insulating film 28 between the control gate 29 and the floatinggate 27 is sufficiently thin, electrons can be injected by directtunneling. As a result, the source region 14 and drain region 15 arerendered conductive.

FIG. 48 is a plan view showing emission of electrons from the floatinggate 27 to the control gate 29 of the aging device by direct tunneling.

The life time can be set within a predetermined range by adjusting thearea by which the floating gate 27 and control gate 29 face each other,because the direct tunnel current is proportional to the area of thefacing portion.

An aging device can also be implemented by a p-type semiconductorsubstrate instead of the n-type semiconductor substrate, and the sourceand drain of n-type diffusion layers instead of the source and drain ofp-type diffusion layers. In this case, the operation principle andstructure are the same except that positive charges (realized by FNtunnel emission of electrons) are first injected into the floating gateand positive charges (realized by direct tunnel injection of electrons)are emitted.

28th Embodiment

FIG. 49 is a sectional view showing an aging device according to the28th embodiment. In the aging device, a gate insulating film 12 isformed on an n-type semiconductor substrate 11, and a floating gate 27is formed on the gate insulating film 12. An insulating film 28 isformed on the floating gate 27, and a control gate 29 is formed on theinsulating film 28. A p⁺-type source region 14 and p⁺-type drain region15 are so formed as to interpose the gate insulating film 12. Thecontrol gate 29 is connected to an external terminal, forming an agingdevice.

The source region 14 of the aging device is connected to a firstfunctional block 1. The drain region 15 is connected to a secondfunctional block 2.

In this aging device, the gate insulating film 12 is thinner at an endportion 30 than the remaining portion. The floating gate 27 overhangsthe source region 14.

FIG. 50 is a sectional view for explaining a method of injectingelectrons into the floating gate 27 of the aging device. As shown inFIG. 50, a positive voltage V1>0 is applied to the control gate 29, andelectrons are injected from the semiconductor substrate 11 into thefloating gate 27 by FN tunneling.

If the gate insulating film 12 between the semiconductor substrate 11and the floating gate 27 is sufficiently thin, electrons can also beinjected by direct tunneling.

FIG. 51 is a sectional view for explaining another method of injectingelectrons into the floating gate 27 of the aging device.

As shown in FIG. 51, a negative voltage V1<0 is applied to the controlgate 29, and electrons are injected from the control gate 29 into thefloating gate 27 by FN tunneling.

If the gate insulating film 28 between the control gate 29 and thefloating gate 27 is sufficiently thin, electrons can also be injected bydirect tunneling.

After electrons are injected into the floating gate 27, the voltage V1applied to the control gate 29 is stopped, or the terminal is physicallyremoved, and then followed by packaging.

Accordingly, the source region 14 and drain region 15 are renderedconductive. In other words, even if the voltage of the control gate 29is 0 V, the aging device is turned on.

As shown in FIG. 52, redundant electrons accumulated in the floatinggate 27 are emitted to the source region 14 by direct tunnel gateleakage via the end portion 30 where the gate insulating film 12 isthinner. The field applied to the channel weakens over time, and whenthe inversion layer disappears, no current flows between the sourceregion 14 and drain region 15. The first and second functional blocks 1and 2 cannot be accessed, making the conduction therebetween in an offstate.

The expiration date (life time) of the aging device is proportional tothe amount of negative charges injected into the gate, and inverselyproportional to direct tunnel gate leakage. The expiration date can beset within a predetermined range by adjusting the injection time, thevolume of the floating gate 27, the thickness of the gate insulatingfilm 12 at the end portion 30 where the floating gate 27 overhangs thesource region 14, the overlapping area of the end portion 30 where thefloating gate 27 overhangs the source region 14, and the like.

An aging device can also be implemented by a p-type semiconductorsubstrate instead of the n-type semiconductor substrate, and the sourceand drain of n-type diffusion layers instead of the source and drain ofp-type diffusion layers. In this case, the operation principle andstructure are the same except that positive charges (realized by FNtunnel emission of electrons) are first injected into the floating gateand positive charges (realized by direct tunnel injection of electrons)are emitted. The end portion 30 may be formed on the drain 15 side.

29th Embodiment

FIG. 53 is a sectional view showing an aging device according to the29th embodiment. In the aging device, a gate insulating film 12 isformed on an n-type semiconductor substrate 11, and a floating gate 27is formed on the gate insulating film 12. An insulating film 28 isformed on the floating gate 27, and a control gate 29 is formed on theinsulating film 28. A side gate 31 is formed on the side surfaces of thecontrol gate 29 and floating gate 27. An insulating film is formedbetween the side gate 31 and the control gate 29 and floating gate 27,but is not illustrated.

A p⁺-type source region 14 and p⁺-type drain region 15 are so formed asto interpose the gate insulating film 12. The control gate 29 isconnected to an external terminal, forming an aging device.

The source region 14 of the aging device is connected to a firstfunctional block 1. The drain region 15 is connected to a secondfunctional block 2.

In this aging device, the gate insulating film 12 is thicker at an endportion 30 on the side gate 31 side than the remaining portion.

FIG. 54 is a sectional view for explaining a method of injectingelectrons from the semiconductor substrate 11 into the floating gate 27.As shown in FIG. 54, a positive voltage V1>0 is applied to the controlgate 29, and electrons are injected from the semiconductor substrate 11into the floating gate 27 by FN tunneling.

If the gate insulating film 12 between the semiconductor substrate 11and the floating gate 27 is sufficiently thin, electrons can also beinjected by direct tunneling.

FIG. 55 is a sectional view for explaining another method of injectingelectrons into the floating gate 27. As shown in FIG. 55, a negativevoltage V1<0 is applied to the control gate 29, and electrons areinjected from the control gate 29 into the floating gate 27 by FNtunneling.

If the insulating film 28 between the control gate 29 and the floatinggate 27 is sufficiently thin, electrons can also be injected by directtunneling.

After electrons are injected into the floating gate 27, the voltage V1applied to the control gate 29 is stopped, or the terminal is physicallyremoved, and then followed by packaging.

Accordingly, the source region 14 and drain region 15 are renderedconductive. In other words, even if the voltage of the control gate 29is 0 V, the aging device is turned on.

As shown in FIG. 56, redundant electrons accumulated in the floatinggate 27 are emitted to the semiconductor substrate 11, control gate 29,and side gate 31 by direct tunneling. The potential of the side gate 31may be floated or kept at a predetermined potential.

In this manner, the field applied to the channel weakens over time, andwhen the inversion layer disappears, no current flows between the sourceregion 14 and drain region 15.

The expiration date (life time) of the aging device is proportional tothe amount of negative charges accumulated in the floating gate 27, andinversely proportional to direct tunneling current. The expiration datecan be set within a predetermined range by adjusting the electroninjection time, the volume of the floating gate 27, the gate area, thearea by which the floating gate 27 and side gate 31 face each other, thethickness of the gate insulating film 12 between the semiconductorsubstrate 11 and the floating gate 27, the thickness of the insulatingfilm 28 between the floating gate 27 and the control gate 29, thethickness of an insulating film (not shown) between the floating gate 27and the side gate 31, the extension region, and the like.

An aging device can also be implemented by a p-type semiconductorsubstrate instead of the n-type semiconductor substrate, and the sourceand drain of n-type diffusion layers instead of the source and drain ofp-type diffusion layers. In this case, the operation principle andstructure are the same except that positive charges (realized by FNtunnel emission of electrons) are first injected into the floating gateand positive charges (realized by direct tunnel injection of electrons)are emitted. The side gate 31 and end portion 30 may be formed on thesource region 14 side.

The manufacture of an aging device with a double-gate structuredescribed in the above embodiments requires at least two film formationprocesses at high cost. To prevent this, a method of implementing along-life, low-cost aging device with a single gate structure using onlyone polysilicon gate electrode at a low integration degree will beexplained in the 30th to 34th embodiments.

30th Embodiment

FIG. 57A is a plan view showing an aging device according to the 30thembodiment. FIG. 57B is a sectional view taken along the line 57B-57B inFIG. 57A. FIG. 57C is a sectional view taken along the line 57C-57C inFIG. 57A.

In the 30th embodiment, a control gate 45 is formed in a semiconductorsubstrate 41. The control gate 45 is electrically isolated from source42, channel 46, and drain 43 regions (to be referred to as an SGD regionhereinafter) by an element isolation region 47 by LOCOS (LOCal Oxidationof Silicon) (FIG. 57C).

As shown in FIG. 57B, the section of the SGD region has a general MOSstructure. A channel region 46 is formed below the (floating) gateelectrode 44 between the source region 42 and the drain region 43.

The floating gate electrode 44 is formed from polysilicon. As shown inFIG. 57C, the floating gate electrode 44 is formed on the semiconductorsubstrate 41 via gate insulating films 48 and 49 and the elementisolation region 47 so as to be bridged between the control gate 45 andthe channel region 46 in the SGD region. The gate insulating films(tunnel oxide films) 48 and 49 on the two sides of the element isolationregion 47 can have the same film thickness.

FIGS. 58A to 58C are views showing a normally-off (automatic turn-off)device for explaining the operation principle of the aging deviceaccording to the 30th embodiment. FIG. 58A is a sectional viewcorresponding to FIG. 57C. Source and drain layers 42 and 43 of p⁺-typediffusion layers and a control gate 45 of a p⁺-type diffusion layer areformed in an n-type substrate 41. When a negative high voltage isapplied to the control gate 45, electrons are injected into an n⁺-typepolysilicon floating gate 44 by hole tunneling.

Electrons diffuse in the (floating) gate 44 on the SGD region. As shownin FIG. 58B, holes are attracted to the MOSFET channel region 46 to forma channel, turning on the MOSFET. Electrons injected into the floatinggate 44 leak to the channel region 46 via the gate insulating film 48 bydirect tunneling. The MOSFET is turned off upon the lapse of apredetermined time.

FIG. 58C shows a change in MOSFET drain current ID over time. The MOSFETis turned off upon the lapse of a predetermined time, which is a featureof a normally-off device.

FIGS. 59A to 59C are views showing a normally-on (automatic turn-on)device for explaining the operation principle of another aging deviceaccording to the 30th embodiment. FIG. 59A is a sectional viewcorresponding to FIG. 57C. Source and drain layers 42 and 43 of n⁺-typediffusion layers and a control gate 45 of a p⁺-type diffusion layer areformed in an n-type substrate 41. When a negative high voltage isapplied to the control gate 45, electrons are injected into an n⁺-typepolysilicon floating gate 44 by hole tunneling.

Electrons diffuse in the (floating) gate 44 on the SGD region. As shownin FIG. 59B, holes are attracted to the MOSFET channel region 46 to turnoff the MOSFET. Electrons injected into the floating gate 44 leak to thechannel region 46 via the gate insulating film 48 by direct tunneling.The MOSFET is turned on upon the lapse of a predetermined time.

FIG. 59C shows a change in MOSFET drain current ID over time. The MOSFETis turned on upon the lapse of a predetermined time, which is a featureof a normally-on device.

FIGS. 60A to 60C are views showing a normally-on device for explainingthe operation principle of still another aging device according to the30th embodiment. FIG. 60A is a sectional view corresponding to FIG. 57C.Source and drain layers 42 and 43 of p⁺-type diffusion layers and acontrol gate 45 of an p⁺-type diffusion layer are formed in a p-typesubstrate 41. When a positive high voltage is applied to the controlgate 45, holes are injected into a p⁺-type polysilicon floating gate 44by hole tunneling.

Holes diffuse in the (floating) gate 44 on the SGD region. As shown inFIG. 60B, electrons are attracted to the MOSFET channel region 46 toturn off the MOSFET. Holes injected into the floating gate 44 leak tothe channel region 46 via the gate insulating film 48 by directtunneling. The MOSFET is turned on upon the lapse of a predeterminedtime.

FIG. 60C shows a change in MOSFET drain current ID over time. The MOSFETis turned on upon the lapse of a predetermined time, which is a featureof a normally-on device.

FIGS. 61A to 61C are views showing a normally-off device for explainingthe operation principle of still another aging device according to the30th embodiment. FIG. 61A is a sectional view corresponding to FIG. 57C.Source and drain layers 42 and 43 of n⁺-type diffusion layers and acontrol gate 45 of an n⁺-type diffusion layer are formed in a p-typesubstrate 41. When a positive high voltage is applied to the controlgate 45, holes are injected into a p⁺-type polysilicon floating gate 44by hole tunneling.

Holes diffuse in the (floating) gate 44 on the SGD region. As shown inFIG. 61B, electrons are attracted to the MOSFET channel region 46 toturn on the MOSFET. Holes injected into the floating gate 44 leak to thechannel region 46 via the gate insulating film 48 by direct tunneling.The MOSFET is turned off upon the lapse of a predetermined time.

FIG. 61C shows a change in MOSFET drain current ID over time. The MOSFETis turned off upon the lapse of a predetermined time, which is a featureof a normally-off device.

31st Embodiment

FIG. 62A is a plan view showing an aging device according to the 31stembodiment. FIG. 62B is a sectional view taken along the line 62B-62B inFIG. 62A. A sectional view taken along the line A-A′ is the same as FIG.57B, and will be omitted.

The 31st embodiment is a modification of the 30th embodiment, and anelement isolation region 47 is formed by STI (Shallow Trench Isolation).The remaining structure is the same as that in the 30th embodiment, anda detailed description thereof will be omitted.

32nd Embodiment

FIG. 63A is a plan view showing an aging device according to the 32ndembodiment. FIG. 63B is a sectional view taken along the line 63B-63B inFIG. 63A. A sectional view taken along the line A-A′ is the same as FIG.57B, and will be omitted.

The 32nd embodiment is a modification of the 30th embodiment. Floatinggate electrodes 44 ₁ and 44 ₂ are respectively formed from polysiliconon a control gate 45 and on a channel region 46 in the SGD region. Thetwo floating gate electrodes 44 ₁ and 44 ₂ are connected by a metalinterconnection 50. Also in this arrangement, electrons or holesinjected from a control gate 45 diffuse from the floating gate 44 ₁ intothe floating gate 442 via the metal interconnection 50. The aging devicecan operate similarly to that of the 30th embodiment.

33rd Embodiment

FIG. 64A is a plan view showing an aging device according to the 33rdembodiment. FIG. 64B is a sectional view taken along the line 64B-64B inFIG. 64A. A sectional view taken along the line A-A′ is the same as FIG.57B, and will be omitted.

In the 33rd embodiment, an element isolation region 47 is formed by STIinstead of LOCOS in the 32nd embodiment. Also in this arrangement, theaging device can operate similarly to that of the 30th embodiment.

34th Embodiment

FIG. 65A is a plan view showing an aging device according to the 34thembodiment. FIG. 65B is a sectional view taken along the line 65B-65B inFIG. 65A. In the 34th embodiment, a control gate 45, and source anddrain diffusion layers 42 and 43 are electrically isolated by an elementisolation region 47 formed by LOCOS or STI (in FIG. 65B, STI). Floatinggate electrodes 44 ₁ and 44 ₂ are respectively formed from polysiliconon the control gate and the source and drain diffusion layers 42 and 43.The two floating gate electrodes 44 ₁ and 44 ₂ are connected by a metalinterconnection 50.

The 34th embodiment is different from the 33rd embodiment in that thecontrol gate 45 is arranged in the direction of a MOSFET channel 46. Byusing the metal interconnection 50, the control gate 45 and the source42 and drain 43 which are electrically isolated from each other can befreely laid out.

Gate insulating films (tunnel oxide films) 48 and 49 on the two sides ofthe element isolation region 47 can have the same film thickness. Theoperation principle is the same as that in the 30th embodiment.

An aging device (age-based change device) or aging block applied to theeighth to 13th embodiments will be explained.

35th Embodiment

As shown in FIG. 66, the 35th embodiment is related to a detailedcircuit arrangement example of the eighth embodiment using a groundedgate MOSFET (to be referred to as a GGMOS hereinafter). The workfunction of the gate insulating film, substrate-side impurityconcentration, or gate material is so adjusted as to attain anormally-on MOSFET 61 which constitutes an aging device 3X. Similar tothe above-described embodiments, excessive electrons are accumulated ina charge accumulation gate 62 at the start of a change over time. Thepresence of excessive electrons keeps the MOSFET 61 OFF.

As an excessive electron injection method, excessive electrons can beinjected into the gate via any one of the p-n junction, the pnpjunction, the n⁺nn⁺ junction, the p⁺pp⁺ junction, the npn junction, andthe Schottky junction. When a floating gate is used, electrons can beinjected from a portion of the insulating member surrounding thefloating gate by FN tunneling.

The charge accumulation gate 62 is connected to a p-n diode 63. Upon thelapse of a predetermined time, excessive electrons are emitted to ground(GND) by the diffusion current of the p-n diode 63 connected to then-type charge accumulation gate 62. The MOSFET 61 shifts to the ONstate, the potential of the signal line is clamped, and no signalpropagates between the signal line and the internal circuit. In thiscase, the potential of the signal line may be clamped to that of anothersignal line or a power supply line in place of ground potential.

FIG. 67 is a sectional view showing an aging device structure using theGGMOS in the direction of channel length according to the 35thembodiment. Each aging device is electrically isolated from otherregions by STI element isolation regions 66. A signal line 7 isconnected to a drain region 64.

To inject electrons into the charge accumulation gate 62, a high writevoltage is applied to, e.g., the signal line 7 to generate collisionions at the junction between the n⁺-type region of the drain 64 and ap-well 68. Secondary electrons generated at this time are injected intothe charge accumulation gate 62.

When electrons are written in the charge accumulation gate 62, an agingdevice 3X is turned off. In this state, a signal propagates between anI/O terminal 5 and an internal circuit 6. When electrons in the chargeaccumulation gate 62 are emitted, the potential of the signal line 7 isclamped to the potential of ground (GND) (or another signal line or apower supply line). After that, no signal propagates between the signalline 7 and the internal circuit 6.

FIGS. 68A and 68B are a plan view showing the aging device using theGGMOS according to the 35th embodiment, and a sectional view in thedirection of channel width. A p⁺-type region 67 is formed on a side ofthe n⁺-type region for forming the charge accumulation gate 62 on whichground (GND) (or another signal or a power supply line) is connected.With this structure, an aging device which realizes the function of thepresent invention can be easily formed. As shown in FIG. 68B, it isnecessary that the position of a junction between the n-type region 62and the p-type region 67 is apart from the edge of the STI region 66.

FIGS. 69A and 69B are a plan view showing the aging device using theGGMOS according to a modification of the 35th embodiment, and asectional view in the direction of channel width. The emission time ofexcessive electrons is adjusted by changing the area of a portion wherethe charge accumulation gate 62 and p⁺-type region 67 form a p-njunction.

In the 35th embodiment, excessive electrons are emitted using the p-njunction 63. Instead of the p-n junction, a tunnel junction using aninsulator may be formed to emit excessive electrons by the tunnelcurrent. A Schottky junction may also be used.

The 35th embodiment has described the automatic turn-on aging device 3Xusing an nMOSFET, but a pMOSFET may be adopted. In this case, excessiveholes are injected into the charge accumulation gate 62.

36th Embodiment

As shown in FIG. 70, the 36th embodiment is related to a detailedcircuit arrangement of the 10th embodiment (FIG. 10). A normally-onswitch 8 is formed from an nMOSFET, a normally-off switch 9 is formedfrom a pMOSFET, and their gates are connected to the output line of anaging block 10.

The aging block 10 is comprised of a load resistor 68 and an automaticturn-on aging device 3X which are series-connected between Vdd and Vss.While excessive electrons exist in the charge accumulation gate, theautomatic turn-on aging device 3X is OFF, and the aging block 10 outputsa high voltage (in FIG. 70, Vdd). In this state, the nMOSFET 8 is ON,and the PMOSFET 9 is OFF. A signal propagates between an I/O terminal 5and a 1st internal circuit 61.

Upon the lapse of time, the automatic turn-on aging device 3X shifts tothe ON state, and the aging block 10 outputs a low voltage (in FIG. 70,Vss). In this state, the nMOSFET 8 is OFF, and the pMOSFET 9 is ON. Asignal propagates between the I/O terminal 5 and a 2nd internal circuit6 ₂.

FIG. 71 shows a modification to the 36th embodiment. In the arrangementof the aging block 10 shown in FIG. 70, the output voltage is determinedby resistance distribution of the load resistor 68 and automatic turn-onaging device 3X, and the voltage level of Vdd or Vss is not alwaysensured.

To solve this, the output from the aging block 10 is stabilized at Vddor Vss by connecting an even number of inverters 69 and 70 to the outputof the automatic turn-on aging device 3X, as shown in FIG. 71.

The aging block 36 described in the 12th embodiment adopts an automaticturn-off aging device. The automatic turn-off aging device can beimplemented by modifying the devices in FIG. 67 to FIGS. 69A and 69B.That is, excessive carriers which invert the channel are injected intothe charge accumulation gate of a normally-off MOSFET, and dischargedupon the lapse of time. The automatic turn-off aging devices 3 in the14th to 29th embodiments can also be used.

A method of calculating the time (life time) at which the aging devicedescribed in the above embodiment changes from ON to OFF will beexplained.

Let S be the area of a gate electrode (including a floating gate) whichholds charges, T_(ox) be the thickness of a gate insulating film belowthe gate electrode, ε_(ox) be the permittivity of the oxide, V_(th) bethe threshold voltage of the gate insulating film, and I_(ag) be theleakage current from the gate. The life time of the aging device can becalculated by$\tau_{ag} = {\frac{ɛ_{ox}S}{T\quad o\quad x}\left\lbrack {\frac{\ln\left( {I_{ag}\left( \Delta_{0} \right)} \right)}{\left( \frac{\partial I_{ag}}{\partial\Delta} \right)_{\Delta\quad 0}} - \frac{\ln\left( {I_{ag}\left( \Delta_{ag} \right)} \right)}{\left( \frac{\partial I_{ag}}{\partial\Delta} \right)_{\Delta\quad{ag}}}} \right\rbrack}$Note  that${\Delta_{0} = {{\frac{T\quad o\quad x}{ɛ_{ox}} \cdot Q}\quad s}},{\Delta_{ag} = {B_{0} \cdot \left( {\sqrt{1 + \frac{2{V_{th}}}{B_{0}}} - 1} \right)}},{B_{0} = {{ɛ_{si} \cdot q \cdot N_{B} \cdot T}\quad o\quad{x^{2}/ɛ_{ox}^{2}}}}$where Qs is the surface charge density below the gate electrode bycharges injected into the gate electrode, εSi is the siliconpermittivity, q is the elementary charge, N_(B) is the impurityconcentration of the substrate. I_(ag) has a different expressiondepending on the embodiment. In the 14th and 15th embodiments in whichthe p-n junction is connected to the gate electrode,${{I_{ag}\left( {\Delta(t)} \right)} = {q\quad{A\left\lbrack {{\frac{1}{2}\frac{n_{i}}{\tau_{0}}W_{D}{\exp\left( \frac{q \cdot {V_{eff}(t)}}{2k_{B}T} \right)}} + {\left( {{\frac{D_{e}}{L_{e}}n_{p\quad 0}} + {\frac{D_{h}}{L_{h}}P_{n\quad 0}}} \right) \cdot \left( {{\exp\left( \frac{q \cdot {V_{eff}(t)}}{k_{B}T} \right)} - 1} \right)}} \right\rbrack}}},\quad{{V_{eff}(t)} = {\frac{B_{0}}{2} \cdot \left\lbrack {\left( {1 + \frac{\Delta(t)}{B_{0}}} \right)^{2} - 1} \right\rbrack}}$is established where A is the junction area, Δ(t) is the agingpotential, t is the time, n_(i) is the intrinsic carrier concentration,τ_(O) is the carrier life time in the depletion layer, W_(D) is thedepletion layer width around the junction, kB is the Boltzmann constant,T is the absolute temperature, D_(e) is the electron diffusioncoefficient, L_(e) is the electron diffusion length, n_(po) is theelectron concentration in p-type silicon, D_(h) is the hole diffusioncoefficient, L_(h) is the hole diffusion length, and p_(no) is the holeconcentration in n-type silicon.

I_(ag) corresponding to the 16th to 19th embodiments is given by${I_{ag}\left( {\Delta(t)} \right)} = {q\quad{A\left\lbrack {{\frac{1}{2}\frac{n_{i}}{\tau_{0}}W_{D}{\exp\left( \frac{q \cdot {V_{eff}(t)}}{2k_{B}T} \right)}} + {\left( {{\frac{D_{e}}{L_{e}}n_{p\quad 0}} + {\frac{D_{h}}{L_{h}}P_{n\quad 0}}} \right) \cdot \left( {{\exp\left( \frac{{q \cdot {V_{eff}(t)}} - V_{B}}{k_{B}T} \right)} - 1} \right)}} \right\rbrack}}$where V_(B) is the base voltage.

In the use of the Schottky junction in the 20th and 21st embodiments,$I_{ag} = {{A \cdot R \cdot T^{2}}{{\exp\left( {- \frac{q\quad\phi_{B}}{k_{B}T}} \right)} \cdot \left\lbrack {{\exp\left( \frac{q \cdot {V_{eff}(t)}}{k_{B}T} \right)} - 1} \right\rbrack}}$where R is the Richardson constant, and φ_(B) is the Schottky barrierheight.

I_(ag) corresponding to the 22nd to 25th embodiments is given by${I_{ag}\left( {\Delta(t)} \right)} = {\frac{W_{G}}{L_{G}}\mu_{n}{C_{ox}\left\lbrack {{\left( {V_{G} - V_{TH}} \right){V_{eff}(t)}} - \left( {V_{eff}(t)} \right)^{2}} \right\rbrack}}$where W_(G) is the gate width of the MOSFET connected to the gate whichholds charges, L_(G) is the gate length of the MOSFET connected to thegate which holds charges, μ_(n) is the mobility of the MOSFET connectedto the gate which holds charges, C_(ox) is the gate capacitance of theMOSFET connected to the gate which holds charges, and V_(G) is thevoltage applied to the gate of the MOSFET connected to the gate whichholds charges.

I_(ag) corresponding to the 26th to 29th embodiments is given by${I_{ag}\left( {\Delta(t)} \right)} = {A\frac{\quad{24q\quad m_{DE}}}{\pi^{2}h^{3}}{\int{{{\mathbb{d}E} \cdot \sqrt{\left( {E - {E\quad C_{1}}} \right) \cdot \left( {E - {E\quad C_{2}}} \right)} \cdot \left( {{f_{1}\left( {\Delta(t)} \right)} - f_{2}} \right)} \times {D(E)}}}}$where m_(DE) is the density-of-state effective mass, EC₁ is theconduction band edge of the floating gate, EC₂ is the conduction bandedge of the control gate or the silicon surface, f₁ is the occupationprobability of electrons in the floating gate, f₂ is the occupationprobability of electrons in the control gate or the silicon surface, andD(E) is the probability at which electrons with energy E tunnel betweenthe floating gate and the control gate. The calculation method isdisclosed in Jpn. Pat. Appln. KOKAI Publication No. 2002-76338.

All the expressions of I_(ag) in the present embodiment have beendescribed. The calculation results of the life time (τ_(ag)) by I_(ag)in the use of, e.g., the p-n junction will be described. Thiscalculation reveals the value of τ_(ag) changing in accordance withvarious parameters which determine the aging device structure. Anoptimal device structure can be determined in accordance withmanufacturing conditions, system performance, or user's request.Calculation using another I_(ag) can be achieved similarly to thisexample, and a detailed description thereof will be omitted.

FIG. 72 shows the threshold voltage dependence. The abscissa representsthe threshold, and the ordinate represents the life time.

As shown in FIG. 72, as the threshold voltage increases, the life timeshortens. The threshold voltage control is suitable for adjusting thelife time from several weeks to several months by using a semiconductorsubstrate or the polysilicon impurity concentration.

FIG. 73 shows the dependence on the film thickness of the gateinsulating film. The abscissa represents the thickness of the gateinsulating film, and the ordinate represents the life time.

As shown in FIG. 73, as the gate insulating film becomes thicker, thethreshold increases and the life time shortens. If the film thickness isover 10 nm, the film thickness dependence is weak, such formation iseffective for adjusting the life time for several months.

FIG. 74 shows the dependence on the junction area of the p-n junction.The abscissa represents the junction area of the p-n junction, and theordinate represents the life time.

As shown in FIG. 74, as the junction area increases, the leakage currentincreases and the life time shortens. This is effective for adjustingthe life time from several months to several years depending on the gatearea.

FIG. 75 shows the dependence on the impurity concentration of the p-njunction. The abscissa represents the logarithm of the acceptorconcentration at the junction, and the ordinate represents the lifetime.

As shown in FIG. 75, as the donor or acceptor concentration increases,the life time becomes longer. The life time is effectively adjustedusing a region with a relatively gradual slope in FIG. 75. For example,for a donor concentration of 1×10¹⁶ cm⁻³, the life time almost free fromvariations can be designed at an acceptor concentration of 1×10¹⁷ cm⁻³.

As shown in FIG. 74, the life time becomes shorter in proportion to thejunction area. By using this property, the life time can be freelyadjusted with a small error.

According to the above-described embodiments, the first and secondfunctional blocks can be disconnected or connected upon the lapse of apredetermined time by a semiconductor time switch interposed in orconnected to a signal line between the first and second functionalblocks. An expiration date can be set for a desired function obtained bythe two functions. Upon the lapse of a predetermined time, theinformation or function of an internal circuit which can be used from anI/O terminal can be switched.

An accurate operation life time of the semiconductor time switch can beset by adjusting the charge injection time into a MOS structure, thegate volume, the junction area, the impurity concentration at thejunction, the insulating film thickness, the channel area, the extensionregion, or the like. The life time determined by structural parametersof the device can be set only by the design or initial charge injection,and a time limit function utilization apparatus which can preventtampering of the life time can be provided.

In the time limit function utilization apparatus, it is desirable thatthe first functional block is a memory which stores an encodedencryption key, the second functional block is a decoder which decodesthe encryption key, and a desired function is the decoded encryptionkey.

If the abovementioned life time control technique is presented in lowcost, it can be mounted on a wireless IC tag, or a radio frequencyidentification tag (RFID). There are many applications of RFID on whichis mounted an encryption key with a time limit by a solid state agingdevice. Some examples will be presented hereinafter.

The first example is an application to transportation system. There ismany problems in current transportation system, such that all packagesin a container cannot be checked one by one, and there is a danger thatmaterials for mass destruction weapons for terrorism, or illegal drugsare mixed up in a general purpose transportation system. So it is understudy to legislate to attach RFID on each transportation package for thesecurity of the transportation system.

However, it is not so technically difficult to tamper and reuse RFID,whose information stored therein is illegally renewed after peeling offused RFID from a transportation package. Therefore, used RFID must bereclaimed without fail. Terrorist's possession of leaked RFID fromreclaiming, even if it is a small quantity, causes social unrest.Reclaiming itself requires an extra cost. If the encryption keyregistered in a tag has a time limit by means of a solid state agingdevice, there is no need to reclaim the tags, and cost is saved withoutimpairment of the security.

The second example is an application to products having a consuming timelimit. RFID attachment to a package of a perishable product is understudy to secure traceability. However, tampering or replacing of thetag, and exchanging of the package itself reduce half its originaleffect. Therefore, the officially delivered and controlled encryptionkey must have a time limit by means of a solid state aging device. Theencryption key mounted on RFID cannot be read if the products are notdistributed within a consuming time limit, so that consumers canidentify the products within the consuming limit or not by means of, forexample, a sensor carried by a personal handy phone.

The third example is an application to maintaining of the brand value.Rouge or perfume products out of a consuming limit are sometimes sold ata lower price, so that the manufactures cannot keep the gross saleswithout lowering the prices of the regular brand products. Consumers arehardly conscious of the consuming limit of such products. Similar to thesecond example, if the product carries a RFID tag having an encryptionkey with a time limit by means of a solid state aging device, the tagcan inform whether the product is within the consuming limit or not to apersonal handy phone carried by a consumer. Thereby, the consumerrecognize the presence of the consuming limit of such kind of products.

The fourth example is a peel off sticker having an embedded RFID with atime limit by means of a solid state aging device. This sticker can beattached to a member card, admission ticket and so forth to set a timelimit to them, without using a valuable IC card. In this case, consumers(a private concern, school, office, home, friend, and circle) can freelyissue a private authentication with a time limit. This will also beapplied to votes, official documents and so forth. Thus, tremendousapplications are considered by coupling the solid state aging device andRFID.

The applications of the solid state aging device are divide into twomajor categories. One is a battery-less electronic timer, which isexpected to be mounted on a system LSI. The other is an encryption keywith a time limit, which is expected to be mounted on RFID. Theapplication to an electric timer will be discussed later.

The semiconductor time switch of the present embodiments comprisessource and drain regions which are formed apart from each other in asemiconductor layer, and a gate which is formed in the channel regionbetween the source and drain regions. The first functional block isconnected to one of the source and drain regions, and the secondfunctional block is connected to the other one of the source and drainregions, i.e., the source and drain regions are used as the connectionterminals of the switch.

The semiconductor time switch is configured such that a current flowsbetween the source and drain regions by supplying charges to the gate inadvance, charges escape from the gate over time, and no current flowsbetween the source and drain regions upon the lapse of a predeterminedtime.

Alternatively, the semiconductor time switch may be configured such thatno current flows between the source and drain regions by supplyingcharges to the gate in advance, charges escape from the gate over time,and a current flows between the source and drain regions upon the lapseof a predetermined time.

Charges are injected into the gate via any one of a p-n junction, pnpjunction, n⁺nn⁺ junction, p⁺pp⁺ junction, npn junction, and Schottkyjunction.

The gate of the semiconductor time switch is formed by verticallystacking on a semiconductor layer a p-n junction, pnp junction, n⁺nn⁺junction, p⁺pp⁺ junction, npn junction, or Schottky junction.

The semiconductor time switch comprises source and drain regions whichare formed apart from each other in a semiconductor layer, a floatinggate which is formed in the channel region between the source and drainregions, and a control gate which is formed near the floating gate. Thefirst functional block is connected to one of the source and drainregions, and the second functional block is connected to the other oneof the source and drain regions.

The time switch is configured such that a conduction is made, or notmade through the path of the source and drain regions by supplyingcharges to the floating gate in advance, charges escape from thefloating gate over time, and conduction is not made, or made through thepath of the source and drain regions upon the lapse of time.

Charges escape from the floating gate into at least one of the sourceregion, drain region, channel region and control gate.

When a floating gate is used, charges are injected to the floating gatefrom a portion of the insulating member surrounding the floating gate byFN tunneling or direct tunneling.

A side electrode may be formed near the side surface of the floatinggate and charges escape from the floating gate into the side gate.

The above-described embodiments have described the arrangement of thetime limit function utilization apparatus mainly in terms of the system.The following embodiments are related to a semiconductor integratedcircuit which can suppress the influence of the presence of a false bitor manufacturing variations in aging device structure parameters (tunnelinsulating film thickness, impurity concentration, junction area, gateend shape, and the like) on the life time of the aging device, andenhance the controllability of the electronic life time.

According to the following embodiments, a semiconductor integratedcircuit is designed such that not a single aging device but a pluralityof aging devices are parallel-connected and a long-life cell (not thelongest-life cell) determines the life time of the aging circuit.Variations in the use of a single aging device can be suppressed, andvariations by a false bit can also be prevented.

The influence of the presence of a false bit or manufacturing variationsin aging device structure parameters on the life time of the agingdevice can be suppressed, enhancing the controllability of theelectronic timer time.

The aging devices of the foregoing embodiments may be replaced withthose of the following embodiments to obtain better controllability.

Detailed embodiments of the aging device have already been explained,but the aging device will be summarized before a description of thefollowing embodiments.

FIG. 76 is a diagram showing the basic arrangement of the aging device.The main part of the aging device is comprised of a functional region111 with an age-based change, and a sensing part 112 which senses afunctional change. The sensing part 112 receives an input signal from aninput part 113, and an output part 114 outputs an output signal inaccordance with the input signal. In this integrated circuit, thefunctional region with an age-based change is desirably a chargeaccumulation layer accompanied by leakage while the power supply isdisconnected. The sensing part is desirably, e.g., a channel whichconverts a field effect into an electrical resistance.

FIG. 77 shows the first concrete example (corresponding to FIG. 41described above) which realizes the basic arrangement of the agingdevice. A source region 121 and drain region 122 are formed apart fromeach other in the surface of an Si substrate 120. A floating gate 125 isformed via a tunnel insulating film (first gate insulating film) 124above a channel 123 between the source region 121 and the drain region122. A control gate 127 is formed via an insulating film (second gateinsulating film) 126 on the floating gate 125. A source electrode 128and drain electrode 129 are respectively formed in the source region 121and drain region 122.

This arrangement is basically the same as that of an EEPROM with atwo-layered gate structure except that the tunnel insulating film 124 isthinner than that of a general memory cell. More specifically, thetunnel insulating film of a general memory cell is about 10 nm thick,whereas the tunnel insulating film of a memory cell used for the agingdevice is as thin as about 1 to 6 nm.

In this case, the floating gate 125 corresponds to the functional regionwith an age-based change; the channel 123, to the sensing part for afunctional change; the source electrode 128 and drain electrode 129, tothe input part; the potential difference between the source region 121and the drain region 122, to the input signal; the drain electrode 129,to the output part; and the drain current, to the output signal.

FIGS. 78A to 78F are views for explaining that the concrete exampleshown in FIG. 77 functions as an aging device. For example, the sourceand drain are p-type diffusion layers, and the substrate is formed fromn-type Si. As pre-processing, a high field is applied between thesubstrate interface and the floating gate by means of the control gate.Electrons are injected from the channel into the floating gate by FNtunneling. At this time, the substrate interface is inverted, and holesare concentrated to open a channel in the substrate interface, as shownin FIG. 78A.

Electrons in the floating gate directly tunnel to the substrateinterface over time in this state, decreasing the channel field.Originally, the field is continuously decreased by direct tunnelingbecause the elementary charge is very small. For descriptiveconvenience, the field discontinuously decreases at time t₁. As shown inthe graphs of FIGS. 78B and 78C, the output signal which appears as adrain current discontinuously changes over time.

After that, as shown in FIG. 78D, direct tunneling occurs again at timet₂, resulting in a state as shown in FIG. 78E. Direct tunneling occursat time t₃, and all electrons injected into the floating gate areremoved, as shown in FIG. 78F. The channel disappears, and no outputsignal is supplied after time t₃. In this example, the life time of theaging device is the time at which accumulated charges are removed.Hence, the time in which the output signal increases in a normally-onaging device can also be called the life time.

The temporal change in discontinuous output signal has been describedfor convenience, but the output signal continuously changes in practice,as shown in FIG. 79. Electric field decrease occurs at an intervalbetween time ta and time tb, the channel finally disappears, and theoutput signal decreases to the noise level. The aging device utilizesthis age-based change from time ta to time tb. The same effects can alsobe obtained when the roles of electrons and holes are replaced or the ntype and p type are replaced, and a detailed description thereof will beomitted.

FIG. 80 shows the second concrete example (corresponding to FIG. 14described above) which realizes the basic arrangement of the agingdevice. A p⁺-type source region 151 and p⁺-type drain region 152 areformed apart from each other in the surface of an n-type Si substrate150. A gate 155 is formed via an insulating film 154 above a channel 153between the source region 151 and the drain region 152. A p-n junction156 for controlling the leakage current is formed on the gate 155. Asource electrode 158 and drain electrode 159 are respectively formed inthe source region 151 and drain region 152.

In this case, the gate 155 and p-n junction 156 correspond to thefunctional region with an age-based change; the channel 153, to thesensing part for a functional change; the source electrode 158 and drainelectrode 159, to the input part; the potential difference between thesource region 151 and the drain region 152, to the input signal; thedrain electrode 159, to the output part; and the drain current, to theoutput signal.

The function with an age-based change is the same as that of the firstconcrete example except that direct tunneling is replaced by the leakagecurrent of the p-n junction, and a description thereof will be omitted.The same effects can also be obtained when the roles of electrons andholes are replaced or the n type and p type are replaced, and a detaileddescription thereof will be omitted.

FIG. 81 shows the third concrete example (corresponding to FIG. 33described above) which realizes the basic arrangement of the agingdevice. The third concrete example is different from the second concreteexample shown in FIG. 80 in that a Schottky junction 157 is arranged inplace of the p-n junction 156. In this case, the gate 155 and Schottkyjunction 157 correspond to the functional region with an age-basedchange. The function with an age-based change is the same as that of thefirst concrete example except that direct tunneling is replaced by theleakage current of the Schottky junction, and a description thereof willbe omitted. The same effects can also be obtained when the roles ofelectrons and holes are replaced or the n type and p type are replaced,and a detailed description thereof will be omitted.

In this manner, any aging device causes an age-based change in thepower-off state, and an output signal powered and sensed only in readtime changes over time. Embodiments of a semiconductor integratedcircuit using an aging device of this type will be described.

37th Embodiment

In an aging device as shown in FIG. 77, the film thickness of a tunnelinsulating film (e.g., oxide film) on the chip is considered to have anormal distribution with a small full width at half maximum, as shown inFIG. 82. Assuming that the distribution function is the density ofbits(Z(T_(ox))), (the number of bits)·Z(T_(ox))·δT_(ox) represents thenumber of bits between [T_(ox)−δT_(ox)/2, T_(ox)+δT_(ox)/2].

As shown in FIG. 83, the terminals (in this example, drain layers) of Naging devices having such tunnel film thickness distribution areparallel-connected. In FIG. 83, reference numeral 181 denotes an agingdevice; 181 c, a circuit in which plural aging devices 181 are connectedin parallel; 182, a source; and 183, a drain. At this time, a totaldrain current I_(D) can be defined by the sum of drain currents I_(D)′of aging devices 181:I _(D) =N·∫dT _(ox) ·Z(T _(ox))·I _(D)′(T _(ox),τ)  (8)where τ is the parameter representing the time. Charges accumulated inthe floating gate are removed over the time τ, and I_(D) decreases overτ. As shown in FIG. 84, τ obtained when I_(D) decreases to a referencesignal I₀ set at a level higher than the total drain leak or noise levelis regarded as a life time τ_(AG) in the case of a normally-off type.This means that the influence of noise or off-leak can be eliminated bysetting I₀.

FIG. 85 shows the step of realizing this. The process is adjusted toobtain a desired Z (step S1). The gate current of each aging device isobtained by device simulation or actual measurement (step S2). The gatecurrent is obtained for each film thickness. Parallel-connected cellsneed not be arranged in line, and may be spread on the chip, as shown inFIG. 86. In FIG. 86, reference numeral 210 denotes a chip; 211, eachcell; and 212, a decoder which adds output signals from the cells 211and reads some information therefrom. The number (N) ofparallel-connected cells and the arrangement on the chip are determinedby the design (step S3).

The total drain current I_(D) can, therefore, be predicted usingequation (8). An equation by which I_(D) becomes equal to the referencesignal I₀ is solved (step S4), obtaining the total life time τ_(AG) as afunction of N, Z, and I₀ (step S5).

A method of determining τ_(AG) from the film thickness distributionwithin the chip has been described. In practice, the average of thedistribution, the variance, and the like are slightly different betweenchips. If I₀ is set as small as possible and the longest-life celldetermines the total life time τ_(AG), the right trail of thedistribution Z varies due to variations between chips, so that τ_(AG)more greatly varies.

In other words, development of a manufacturing process which reducesdistribution variations between chips to a negligible degree means thatthe longest-life aging device among parallel-connected aging devices candetermine the total life time τ_(AG). However, it is difficult and notpractical to develop a manufacturing process free from variationsbetween chips. The 37th embodiment proposes a life time determinationmethod which can permit not only variations within a chip but alsomanufacturing variations between chips.

More specifically, a predetermined offset is set between the noise leveland the reference signal level I₀, and the time until the output signalI_(D) from the aging device reaches the reference signal level I₀ isdefined as the total life time τ_(AG). The defined total life timeτ_(AG) is shorter than the life time of the largest film thickness(longest life time) within the chip. The longest life time variesbetween chips, and I₀ must be selected such that τ_(AG) defined by I₀becomes shorter than the shortest of the longest life time of the chip.The manufacturing process must also be so adjusted as to make variationsin longest life time between chips fall within a predetermined range.Considering them, I₀ is set, and the process shown in FIG. 85 isexecuted.

As an actual device arrangement, a memory which stores the referencesignal I₀, and a sense circuit which compares an output as the sum ofoutput signals from a plurality of aging devices with the referencesignal I₀ are arranged on the output stage of an aging deviceparallelized circuit (aging circuit), as shown in FIG. 101. The lifetime of the aging circuit is determined from the comparison result ofthe sense circuit.

The structure parameters which influence the life time are not only thetunnel insulating film thickness. The substrate impurity concentration,which influences the gate leakage phenomenon, is also important, asshown in FIG. 87. The impurity concentrations of the well, HALO,diffusion layer, gate polysilicon, and the like are also known toinfluence the life time. In the above-described method, the tunnelinsulating film thickness has been exemplified. The method can beapplied even when the tunnel insulating film thickness is replaced bythe impurity concentration of the well, HALO, diffusion layer, gatepolysilicon, substrate, or the like.

The method can also be applied when the tunnel insulating film thicknessis replaced by the gate area or gate end shape. In the above-describedmethod, the cell structure is a nonvolatile memory structure. The methodcan also be applied when a p-n junction or Schottky junction isconnected to the gate of a MOSFET or the cell structure is integrated.The impurity concentration at the junction, the junction area, and thelike are structure parameters which influence the life time, so thatthey are the objects to which the abovementioned method is applied. Themethod can also be applied to a single electronic transistor.

The above-mentioned structure parameters which influence the life timeare merely some of the structure parameters which should be considered.The method of the 37th embodiment can be modified into a form optimalfor a corresponding structure parameter. This also applies to trimmingto be described later.

This embodiment can cope with a false bit. Assume that a plurality ofaging devices are series-connected, as shown in FIGS. 88A and 88B. Inthis case, if one of N series-connected cells comes to the end of itslife time, the drain current does not flow at the rightmost end, and thesystem determines the end of the life time as a whole. This means thatthe shortest-life aging device determines the total life time τ_(AG),contrarily to the parallel-connected aging devices. If even one of the Naging devices suffers a defect, for some reason, and the signal stopsearlier than the originally set life time, the life time of the entirecircuit is shortened in accordance with the defective aging device.

In the parallel-connected aging devices as described in the 37thembodiment, the total life time is determined by a set of long-lifebits. That is, the total life time is determined by at least a deviceother than a false bit, and minimization of the life time by a false bitcan be prevented. In the presence of a false bit, the left trail(short-life aging device) of the film thickness frequency distribution(Z) shown in FIG. 82 only becomes longer.

A false bit is generated by various causes. Regarding the tunnelinsulating film as a structure parameter which determines the life time,a false bit is generated by the same causes as those of a false bit in anonvolatile memory, such as SILC (Stress-Induced Leakage Current) and adefect. Regarding the p-n junction or Schottky junction, the cause is atrap or the like. Since cells are parallel-connected, these false causescan be simultaneously coped with by the above-mentioned simple process.

To realize this simple process, the number N of parallel-connected cellsmust be so increased as to sufficiently approximate the bit countdensity Z by a normal distribution. N is 20 or more, which will bedescribed later. The validity of the normal distribution is generallyguaranteed at a degree at which Stirling's formula:N!=(2π)^(1/2) ·N ^(N+1/2) ·e ^(−N)  (9)is established. FIG. 89 is a graph obtained by plotting the relativeerror on the left and right sides of Stirling's formula as a function ofa natural number n. The Stirling's formula is substantially effective at20 or more.

The 37th embodiment can implement an electronic timer which can beintegrated on a semiconductor substrate by using an aging device asshown in FIG. 77 without any battery. In this case, a plurality of agingdevices are parallel-connected, and the life time is so designed as tobe determined by a set of long-life cells (excluding the longest-lifecell). As a result, the influence of manufacturing variations in theaging device on the life time can be eliminated. At this time, the lifetime of the aging circuit that is defined by the time at which the sumof drain current becomes equal to the reference signal I₀ becomes longerthan the average of the lives of parallel-connected aging devices, andshorter than the longest life time in the parallel-connected agingdevices. Further, the influence of a false bit can also be eliminated.

38th Embodiment

A normally-off aging device in which a signal (I_(D)) disappears at theend of the life time has been exemplified. The present invention canalso be applied to a normally-on aging device in which a signal (I_(D))is generated at the end of the life time, preventing minimization of thelife time by a false bit and eliminating the influence of manufacturingvariations on the life time.

FIG. 90 shows the classification of normally-on and normally-off agingdevices.

The normally-off aging device is OFF before injection of charges intothe gate. Charges are injected into the gate to turn on the agingdevice. Charges injected into the gate are removed by the leakagecurrent, and the output signal (I_(D)) decreases over time. This stateis shown in the graph of FIG. 91A. The channel is inverted at time τ₁,and the signal decreases. Electrons are injected into the gate for apMOSFET, and holes are injected for an nMOSFET. This realizes the“forget at life time τ₁” function.

This description assumes one bit, and the life time τ₁ is defined bychannel inversion. In practice, in order to prevent variations in τ₁, aplurality of bits are parallel-connected and used, as described above.At this time, the life time τ₁ is newly determined by theabove-described method using the reference signal I₀.

In the normally-on aging device, an impurity is diffused in the channelin advance. The normally-on aging device is ON even before injection ofcharges into the gate. Charges are injected into the gate to turn offthe aging device. Charges injected into the gate are removed by theleakage current, and the output signal (I_(D)) increases over time. Thisstate is shown in the graph of FIG. 91B. The channel is inverted at timeτ₂ and the signal abruptly increases. Holes are injected into the gatefor a pMOSFET, and electrons are injected for an nMOSFET. This realizesthe “remember at life time τ₂” function.

This description assumes one bit, and the life time τ₂ is defined bychannel inversion. In practice, in order to prevent variations in τ₂,plurality of bits are parallel-connected and used, as described above.At this time, the life time τ₂ is newly determined by theabove-described method using the reference signal I₀.

Normally-on and normally-off aging devices are series-connected. FIG. 92is a sectional view showing this structure. In FIG. 92, referencenumeral 261 denotes an STI; 262, a source/drain region; 263, a floatinggate; 264, a control gate; 265, an interlayer dielectric film; and 266,an Al interconnection.

A normally-on aging device with the life time τ₂ is arranged on the leftside of the STI connected by the central Al interconnection or the like,and a normally-off aging device with the life time τ₁ is arranged on theright side. As shown in FIG. 92, the two devices are series-connected bythe interconnection which overstrides the STI. When τ₂<τ₁ is satisfied,the output signal changes over time in an inverted U shape, as shown inthe graph of FIG. 91C.

In order to prevent variations in τ₁ and τ₂ described above, τ₁ and τ₂are determined by a combination of the parallel-connected cells and thereference signal I₀, as described above. More specifically, as shown inFIG. 93, normally-on cells 271 are parallel-connected to form the agingcircuit 271 c and determine τ₂, normally-off cells 272 areparallel-connected to form the aging circuit 272 c and determine τ₁, andthe aging circuit 271 c and the aging circuit 272 c areseries-connected. In FIG. 93, reference numeral 273 denotes an STI; 274,an interconnection; 275, a common source; and 276, a common drain.

Next, normally-on and normally-off aging devices are parallel-connected.The basic arrangement is the same as that in FIG. 83. As shown in FIG.94, N 2Q normally-on aging devices 281 and M normally-off aging devices282 are parallel-connected. The life time is determined from theparallel arrangement and the reference signal. Let τ₂ be the life timeof the normally-on aging device, and τ₁ be the life time of thenormally-off aging device. If τ₁<τ₂ is satisfied, the output signalchanges over time in a U shape, as shown in the graph of FIG. 91D.

The 38th embodiment can attain the same effects as those of the 37thembodiment. In addition, normally-on and normally-off aging devices arecombined. This can realize ON operation a predetermined time after thestart and OFF operation a predetermined time after ON operation, or viceversa. That is, the limit of outputting a signal or the limit ofinhibiting any signal can be set.

39th Embodiment

Two methods of implementing an electronic timer will be explained.

The first electronic timer implementation method utilizes the propertythat output signals (I_(D)) from parallel-connected cells change overtime, as shown in FIGS. 83 and 86. To read an output signal, the senseamplifier must be operated. At this time, the power supply must beconnected. While no read is performed, charges injected into the gateare gradually removed by the leakage current. Thus, an output signal I₁read at time t₁ and an output signal I₂ read at time t₂ are different,where t₁<t₂.

In a normally-off aging device, I₁ is larger than I₂, and the signaldecreases over time. To the contrary, in a normally-on aging device, I₁is smaller than I₂, and the signal increases over time. The time ismeasured from a temporal change in output signal observed every read.Since no power is required if no read is performed, an electronic timerwhich can be integrated without any power supply can be implemented.

It should be noted that output signals I₁, I₂, . . . can be made tocorrespond to times t₁, t₂, . . . regardless of the normally-on ornormally-off aging device. Of several practical methods, an empiricalmethod will be described. For example, charges are injected once, anoutput is measured at each proper time, and an output signalcorresponding to the time is stored. Correspondence codes:

I₁ . . . t₁

I₂ . . . t₂

:

I_(m) . . . t_(m)

:

I_(N) . . . t_(N)

can be prepared. These correspondence codes can be applied to an agingcircuit or aging device manufactured similarly. As another method, ahigh-precision aging simulator is developed to calculate an output I_(m)corresponding to time t_(m) for m=1 to N. The present embodimentbasically adopts the configuration of the aging circuit in which pluralaging devices are connected in parallel only for the sake of life timecontrol. However, the development of the manufacturing technology maymake it possible to configure a similar electronic timer by a singleaging device.

The second electronic timer implementation method can be realized byreplacing, with the time, the frequency of a frequency counter apparatusdisclosed in Jpn. Pat. Appln. KOKAI Publication No. 10-261786. This willbe explained in detail with reference to FIG. 95. N normally-off agingcircuits having lives τ₁, τ₂, . . . , and τ_(n) are prepared. In orderto suppress variations in τ₁, τ₂, . . . , and τ_(n), the above-describedparallel arrangement method and reference signal I₀ are employed. Thatis, the aging circuits 283 shown in FIG. 95 are comprised of a pluralityof parallel-connected aging devices.

The lives meet τ₁<τ₂< . . . <τ_(n). When the 1st aging circuit 2831 tothe mth aging circuit 283 _(m) are ON and the (m+1)th aging circuit 283_(m+1) to the Nth aging circuit 283 _(N) are OFF, the electronic timerrepresents time between τ_(m) and τ_(m+1).

This method can be realized only by an integrable aging device. When anormally-on aging device is used, this method can be applied byexchanging the ON and OFF states.

A sense circuit is required to sense output signals fromparallel-connected aging devices (aging circuits 283). For example,sense circuits are arranged for the respective aging circuits, andoutput signals from the aging circuits are compared with the same signallevel. The sense circuits can also compare output signals from the agingcircuits with different signal levels. When the time is set at a timeinterval obtained by dividing by N the difference between the shortestlife time and the longest life time among N aging circuits, it isdifficult to strictly control the life time of each aging circuit. Tocorrect this, the comparison signal level is adjusted.

The sense circuits which are arranged for the respective aging circuits,and a memory which stores in advance the correspondence code of a signallevel record, an output signal from the aging circuit, and a lapsed timeare incorporated in a decoder 287. All the above-described processes areexecuted in the decoder 287.

The simplest electronic timer utilization method is to set an agingflag. When the sense amplifier reads an output signal, the flag is setdepending on whether the output signal is larger or smaller than thereference signal I₀.

As shown in FIG. 96, the arrangement adopts parallel-connected agingdevices. In FIG. 96, reference numeral 301 denotes an aging device; 305,a common source; 306, a common drain; 311, a sense amplifier; 312,firmware; and 313, a CPU. In this way, the aging flag can be set with anintegrable arrangement which does not require any battery.

More specifically, the added output from a plurality of aging devices301 is sensed by the sense amplifier 311. When the added output reachesa level of the reference signal I₀, the sense amplifier 311 outputs aflag. The firmware 312 operates in accordance with the flat, notifyingthe CPU 313 of the lapse of a time set by the electronic timer. Thefirmware 312 is not necessarily required, and an output from the senseamplifier 311 may be directly supplied to the CPU 313.

40th Embodiment

Manufacturing variations between chips are predicted to be largerbetween different lots than within a single lot. Even if the referencesignal I₀ can be controlled small within a single lot, it may not becontrolled between different lots.

FIG. 98A shows the frequency distribution of each bit (transistor) as afunction of the drain current owing to a manufacturing variation betweenchips. FIG. 98B shows a temporal change in drain current obtained byadding bits having this distribution. The broken line in FIG. 98Bcorresponds to a distribution shifted to a large current side (right) inFIG. 98A. The solid line corresponds to a distribution shifted to asmall current side (left) in FIG. 98A. As the current level decreasesover time, the broken line and solid line come close to each other. Ifthe difference between the averages of the two distributions is small,the life time can be controlled by setting a sufficiently small I₀. Ifthe difference between the averages of the two distributions is largeand high-precision life time control is required, I₀ must be decreasedto the noise level, which cannot be realized.

To meet this strict condition, another method must be adopted, and thustrimming of eliminating an unnecessary bit (transistor) from an objectsubjected to life time calculation is introduced. The concept oftrimming will be explained with reference to FIGS. 99A and 99B. FIG. 99Ais a graph showing the relationship between the drain current and thebit count, and FIG. 99B is an enlarged view showing part of FIG. 99A.

Only the drain currents of bits surrounded by the averages of the twodistributions are added. Assuming that the drain current varies due onlyto the tunnel insulating film thickness, the left edge at which thedrain current is smallest after trimming corresponds to a thick filmedge. To the contrary, the right edge corresponds to a thin film edge.The solid line represents a distribution having an average near thethick film edge, and the broken line represents a distribution having anaverage near the thin film edge.

In this case, the thick film edge means an edge at which the tunnelinsulating film thickness is thick, and the thin film edge means an edgeat which the tunnel insulating film thickness is thin.

FIGS. 100A and 100B show a comparison between temporal changes in draincurrent added before and after trimming. FIG. 100A shows a temporalchange before trimming, and FIG. 100B shows a temporal change aftertrimming. After trimming, the initial current level of the twodistributions become lower because the large-drain-current-side trail iscut. The current disappears from the thin film edge over time, and thesum of drain current abruptly decreases. The slope of the decrease isproportional to the bit count at the thin film edge, and is steep in thedistribution represented by the broken line. After the sum of draincurrent starts to decrease, the added current levels of thethin-film-edge distribution and the thick-film-edge distribution arereversed.

The current level starts to decrease gradually before trimming becauseof the end of the life time at the trail of the thin-film side on whichthe bit count is small. Upon the further lapse of a time, the thick filmedge comes to the end of its life time, and the sum of drain currentdecreases to the noise level in the two distributions. If this state isdefined as the end of the total life time, variations within eachdistribution can be more accurately controlled. At this time, thereference signal I₀ is set smaller than the added current level(obtained by multiplying I_(A) by the bit count at the thick film edge)represented by the broken line at the thick film edge and larger thanthe noise level.

A method of realizing this trimming in a parallelized circuit is shownin FIG. 101. A portion surrounded by the chain line in FIG. 101 is atrimming circuit 350. A portion surrounded by a broken circle is anadder 358. A flash memory and operational circuit are series-connectedbefore the aging devices are parallel-connected. In FIG. 101, referencenumeral 351 denotes each aging device; 351 c, an aging circuit in whichthe aging devices 351 are connected in parallel; 352, each flash memory(trimming transistor) with a two-layered gate structure of a floatinggate and control gate; 353, each operational circuit; 354, a memorywhich stores I_(A) and I_(B); 355, a sense circuit; 356, a memory whichstores the reference signal I₀; and 357, an output part of the sensecircuit.

The operational circuit 353 has four terminals. The first terminal iselectrically connected to the diffusion layer of the trimming transistor352, and the second terminal is electrically connected to the memory354. The third terminal is connected to the adder, and the fourthterminal is electrically connected to the control gate of the trimmingtransistor 352.

Charges are injected into the flash memory 352 to turn it on. Inpractice, the method of turning on the flash memory changes depending onwhether the flash memory is of a normally-on type or normally-off typeor the source/drain region is of an n-type or p-type. In accordance withthe type, charges (electrons or holes) are injected or emitted. Fordescriptive convenience, only a case wherein “charges are injected toturn on the flash memory” will be explained. However, the gist of thepresent embodiment is the same even when “charges are emitted to turn onthe flash memory”. The charge holding characteristic of the flash memorymust be much longer than the life time of the aging device.

The drain voltage is applied to the aging device 351 by using theoperational circuit 353. The drain current is sensed by the operationalcircuit 353, and compared with the current levels I_(A) and I_(B) set inadvance. I_(A) and I_(B) are the current levels of the thick and thinfilm edges shown in FIG. 99B. If the sensed drain current does not fallwithin the range of I_(A) to I_(B), a voltage is applied to the controlgate of the flash memory 352 to turn off the flash memory 352,inhibiting addition of bits. In this fashion, trimming is executed byrewriting the threshold of the flash memory.

If the sensed drain current falls within the range of I_(A) to I_(B),the drain current is added. The added current is sensed by the sensecircuit 355 on the right side in FIG. 101, and compared with thereference signal I₀ stored in the memory 356.

Trimming result information is stored in a newly prepared memory(magnetic memory, MRAM, nonvolatile memory, ROM, or the like). Inreading out the added current, the information is referred to, whicheliminates the need for rewriting the threshold of the trimmingtransistor. The memory is desirably incorporated in the operationalcircuit of the trimming circuit or accessibly arranged. At this time,the trimming transistor can be formed from a general MOSFET or bipolartransistor.

FIG. 102 is a circuit diagram when the memory which stores a trimmingresult is incorporated (the memory which stores a trimming result is notillustrated in FIG. 102). The arrangement is apparently the same as thatin FIG. 101 except the flash memory 352 is replaced by a general MOSFET362. FIG. 103 is a circuit diagram showing a memory 363 which isaccessibly arranged and stores a trimming result. The trimmingtransistor may be replaced by a bipolar transistor. In this case, asshown in FIGS. 104A and 104B, it is desirable to connect the emitter (E)and collector (C) to the output terminal of the aging device 351 and thefirst terminal of the operational circuit 353, respectively, and toconnect the base (B) to the second terminal of the operational circuit353. The emitter and collector may be replaced with each other.

The same effects can also be obtained by electrically disconnecting theoperational circuit 353 in the trimming circuit 350, instead ofrewriting the threshold. The operational circuit 353 is disconnectedmainly at three portions. The first cut portion is a portion between thegate of the trimming transistor 362 (for the bipolar transistor, thebase) and the fourth terminal of the operational circuit 353, as shownin FIG. 105. The cut portion is represented by a resistor 365. This alsoapplies to FIGS. 106 and 107.

The second cut portion is a portion between the output terminal of thetrimming transistor 362 (for the bipolar transistor, the emitter orcollector) and the first terminal of the operational circuit 353, asshown in FIG. 106.

The third cut portion is a portion between the third terminal of theoperational circuit 353 and the adder which adds outputs, as shown inFIG. 107. The operational circuit 353 may be cut at any one, two, or allof the three cut portions. In FIG. 107, simply parallel-connectedportions constitute the adder, similar to other circuit diagrams (FIGS.101 to 103, 105, and 106).

The cut resistor 365 is surrounded by a broken circle. In FIGS. 105 to107, only the top operational circuit 353 is cut. In practice, which ofthe operational circuits 353 in views of the drawing is to be cut, andthe number of operational circuits 353 to be cut is determined inaccordance with the trimming result.

The operational circuit 353 can be cut by electromigration or a laserbefore shipping. Electromigration can use a known method of cutting aconductor by temporarily supplying a large current. In this case, theresistor 365 is desirably a very thin wire in FIGS. 105 to 107.

When a conductor is cut, the trimming transistor can be omitted. In thiscase, the operational circuit 353 is cut at two portions, as shown inFIG. 108. In practice, the operational circuit 353 may be cut at one ortwo portions.

As shown in FIG. 109, the diffusion layers 372 of the aging device 351and trimming transistor 352 are desirably shared with each other. When atwo-layered gate transistor of flash memory type is used as both theaging device 351 and trimming transistor 352, the thickness of thetunnel insulating film 374 of the aging device 351 is desirably thinnerthan that of the tunnel insulating film 384 of the trimming transistor352. In FIG. 109, 370 denotes a semiconductor substrate, and in theaging device 351, 371 denotes the other diffusion layer; 375 a floatinggate; 376, an inter-gate insulator; 377, a control gate, and in thetrimming transistor 352, 382 denotes the other diffusion layer; 385, afloating gate; 386, an intergate insulator; and 387, a control gate.

I_(A) and I_(B) are not always the averages of the distributions, and ifnecessary, can be adjusted to control a characteristic with an age-basedchange as long as the effects of the present embodiment can be obtained.In particular, the time at which the sum of trimmed drain currentabruptly decreases to the noise level, i.e., the life time of the agingcircuit can be adjusted using I_(A). At this time, the life time of theaging circuit can be set shorter than the average of the lives ofparallel-connected aging devices. This is also one of the trimmingeffects.

The thick film edge is important for life time control using trimming,and the thin film edge is not always required. A trimming method usingno thin film edge will be explained with reference to several views ofthe drawing.

FIGS. 110A and 110B show the concept of trimming which ignores the thinfilm edge. FIG. 110A shows the frequency distribution of the bit countas a function of the drain current. FIG. 110B is an enlarged viewshowing part of FIG. 110A. The thick film edge is set at the average ofa distribution (solid line) obtained by shifting the average left. Adistribution obtained by shifting the average right is represented bythe broken line.

FIGS. 111A and 111B show the results of comparing temporal changes inthe sum of drain current before and after trimming. FIG. 111A shows theresult before trimming, and FIG. 111B shows the result after trimming.Because of the absence of any thin film edge, large-current-side trailsare added, and the initial current level is almost the same as thatbefore trimming. The current level starts to decrease gradually overtime under the influence of the large-current-side trail. Immediatelywhen the thick film edge comes to the end of the life time upon thelapse of a time, the added current abruptly decreases to the noiselevel. This state is defined as the end of the total life time.

FIG. 112 shows a method of mounting a trimming circuit having no thinfilm edge. The configuration is similar to FIG. 101 except a memory 354′does not have I_(B), and a detailed description of the operation will beomitted.

Similar to FIGS. 102 and 103, trimming result information is stored in anewly prepared memory (magnetic memory, MRAM, nonvolatile memory, ROM,or the like). In reading out the added current, the information isreferred to, which eliminates the need for rewriting the threshold ofthe trimming transistor. The memory is desirably incorporated in theoperational circuit of the trimming circuit or accessibly arranged. Atthis time, the trimming transistor can be formed from a general MOSFETor bipolar transistor.

Instead of rewriting the threshold, the same effects can also beobtained by electrically disconnecting the trimming transistor and theoperational circuit in the trimming circuit, as shown in FIGS. 105 to107. The operational circuit can be cut by electromigration or a laserbefore shipping. In the use of cutting, the trimming transistor may beomitted, as shown in FIG. 108.

FIG. 113 is a circuit diagram when the memory which stores a trimmingresult is incorporated. The arrangement is apparently the same as thatin FIG. 112 except the flash memory 352 is replaced by the generalMOSFET 362. Compared to FIG. 102, I_(B) is omitted from the memory 354,and the memory 354 is changed into the memory 354′. Embodiments in whichI_(B) is omitted from corresponding memories (354) in FIGS. 103 and 105to 107 can also be realized. Each embodiment can adopt a bipolartransistor shown in FIGS. 104A and 104B. A repetitive description ofthese embodiments will be omitted.

A method (tuning method) of adjusting the reference signal I₀, thickfilm edge I_(A), and thin film edge I_(B) will be described. I₀ will beexemplified, and the same description also applies to I_(A) and I_(B).FIG. 114 shows the arrangement. In FIG. 114, reference numeral 411denotes an aging circuit; 412, a sense circuit; and 413, a memory. Thesense circuit 412 senses an input signal, and outputs “1” if the inputsignal is higher than I₀ or “0” if the input signal is lower than I₀. I₀is utilized in this manner and must be stored.

The simplest method of storing I₀ is to use a ROM, but I₀ cannot betuned after the manufacture. If a flash memory is used as the memory413, I₀ can be tuned even after the manufacture. FIG. 115 shows a tuningmethod using the flash memory. According to this method, the channelresistance is adjusted by the charge amount injected into the floatinggate (FG). The charge holding characteristic of the flash memory must bemuch longer than the life time of the aging device.

In this method, however, as a flash memory cell is employed as an agingdevice, both the tunnel oxide film of the aging device and the tunneloxide film of the flash memory must be formed, resulting in high cost.Considering this, a method using parallel thin wires r₁ to r_(N) asshown in FIG. 116 is also practical. A voltage V is applied using thesense circuit 412. The current I₀ sensed by the sense circuit 412 isgiven byI ₀ =V/r ₁ +V/r ₂ + . . . +V/r _(N)  (10)where r₁ to r_(N) are the resistance values of the thin wires. After themanufacture, one of the thin wires is cut by electromigration or alaser. For example, when the Nth thin wire is cut, the current I₀changes as given by:I ₀ =V/r ₁ +V/r ₂ + . . . +V/r _(N−1)  (11)In this way, I₀ can be tuned after the manufacture.

As another tuning method during the manufacture, a diffusion layer shownin FIG. 117 or a gate clamp shown in FIG. 118 may be applied. In anexample (FIG. 117) using the diffusion layer, I₀ is tuned by theimpurity concentration. In an example (FIG. 118) using the gate clamp,I₀ can be tuned by the channel resistance.

(Modifications)

The aging circuit of the present invention is not limited to the 37th to40th embodiments. All the above embodiments using the aging circuit canbe realized by replacing a 1-bit aging device as a building component ifa manufacturing process capable of accurately controlling variations inlife time between bits is available. This is very difficult to achieveby the state-of-the-art manufacturing technique, but may be realized inthe future.

The aging device according to the 1st to 40th embodiments includes anaging device which utilizes a characteristic of changing an outputsignal over time while the aging device is disconnected from the powersupply though the aging device is connected to the power supply onlywhen a signal is sensed, and which operates offline because of thischaracteristic. The aging device also includes all integrablesemiconductor devices having this characteristic. The 37th to 40thembodiments are related to a semiconductor integrated circuit whichcontrols variations in the age-based change characteristic of the agingdevice.

The 37th and 40th embodiments have mainly described a normally-off agingdevice, but the same effects can also be obtained using a normally-onaging device.

Aging devices are parallel-connected in the 37th embodiment, but are notlimited to parallel connection and may be connected as shown in FIGS.97A and 97B. That is, a plurality of aging devices are series-connected,and a plurality of series-connected portions are parallel-connected.Only one series-connected portion suffers variations under the influenceof a false cell or the like. By parallel-connecting a plurality ofseries-connected portions, variations can be suppressed. At this time,the life time of the aging circuit (age-based change circuit) tends tobe shorter than the average of the lives of the aging devices whichconstitute the circuit. The reference signal I₀ is preferably adjustedto make the life time of the aging circuit shorter. The series-connectedportion can be regarded as one aging device. In the use of trimmingdescribed above, I_(A) can be adjusted to make the life time of theaging circuit longer than the average of the lives of the aging deviceswhich constitute the circuit.

The arrangement of the aging device is not limited to an EEPROM with atwo-layered gate structure. Any device such as ones shown in FIGS. 80and 81 can be used as far as the output signal changes over time whilethe device is disconnected from the power supply.

As described in detail above, the semiconductor integrated circuitaccording to the 37th to 40th embodiments is designed such that aplurality of aging devices are parallel-connected instead of a singleaging device and a long-life cell (excluding the longest-life cell)determines the life time of the aging circuit. Variations in the use ofa single aging device can be suppressed, and variations by a false bitcan be prevented. Further, trimming improves the life timecontrollability and the time controllability of an electronic timerwhich operates offline without any battery.

The influence of the presence of a false bit or manufacturing variationsin aging device structure parameters (tunnel insulating film thickness,impurity concentration, junction area, gate end shape, and the like) onthe life time of the aging device can be suppressed, enhancing thecontrollability of the life and the electronic timer time. Thus, theaging device used in the 1st to 36th embodiments as a time switch ispreferably replaced by the above-mentioned aging circuit.

The number of the aging devices composing the aging circuit with atrimming circuit is desirably not less than 20.

In the semiconductor integrated circuit, the time until an output signalfrom the aging device reaches a predetermined level is defined as thelife time of the aging device. The time until an output signal from theaging circuit reaches a reference signal is defined as the life of theaging circuit. In this case, the reference signal level may be set suchthat the life time of the aging circuit becomes longer than the averageof the life time of the aging device.

The reference signal level may be set to a value smaller by apredetermined offset amount than a value at which an output signal fromthe aging circuit is maximized upon the lapse of a time, or a valuelarger by a predetermined offset amount than a value at which an outputsignal from the aging circuit is minimized upon the lapse of a time.

A memory which stores the reference signal is further arranged and thelevel of the reference signal stored in the memory may be adjusted tocontrol the life time of the aging circuit.

The aging device may have a charge accumulation layer accompanied byleakage while the power supply is disconnected.

The aging device may be constituted by series-connecting a plurality offield effect devices each having a charge accumulation layer accompaniedby leakage while the power supply is disconnected.

The aging circuit may comprise a first sub-aging circuit constituted byparallel-connecting a plurality of first aging devices in which anoutput signal decreases over time, and a second sub-aging circuitconstituted by parallel-connecting a plurality of second aging devicesin which an output signal increases over time. The first and secondsub-aging circuits are series-connected. The times until output signalsfrom the first and second sub-aging circuits reach a level of thereference signal are defined as the lives of the first and secondsub-aging circuits. In this case, the life time of the first sub-agingcircuit can be set longer than that of the second sub-aging circuit.

The aging circuit may comprise a first sub-aging circuit constituted byparallel-connecting a plurality of first aging devices in which anoutput signal decreases over time, and a second sub-aging circuitconstituted by parallel-connecting a plurality of second aging devicesin which an output signal increases over time. The first and secondsub-aging circuits are parallel-connected. The times until outputsignals from the first and second sub-aging circuits reach a level ofthe reference signal are defined as the lives of the first and secondsub-aging circuits. In this case, the life time of the first sub-agingcircuit can be set shorter than that of the second sub-aging circuit.

The aging circuit may comprise a plurality of sub-aging circuits, and amemory area where the correspondence codes of output signals from theplurality of sub-aging circuits and lapsed times are stored in advance.The sense circuit compares the output signals from the plurality ofsub-aging circuits with the correspondence codes stored in the memoryarea, and senses the lapsed operation time of the aging circuit.

The aging circuit may comprise N sub-aging circuits having differentlives defined by times until an added output signal reaches apredetermined level. The sense circuit simultaneously compares outputsignals from the N sub-aging circuits with a reference signal, andsenses the lapsed operation time.

The N sub-aging circuits have lives different by a predetermined time.The time may be divided at a time interval obtained by dividing, by N,the difference between the shortest life time and the longest life timeamong the N aging circuits in accordance with the comparison result ofthe sense circuit.

Each of a plurality of circuit breakers may be a trimming transistorwith a two-layered gate structure which has first and second diffusionlayers formed apart from each other in a semiconductor substrate, afirst gate electrode formed via a first insulating film on thesemiconductor substrate between the first and second diffusion layers,and a second gate electrode formed on the first gate electrode via asecond gate insulating film, and has the first diffusion layerelectrically connected to a corresponding one of the output terminals ofa plurality of aging devices. The second diffusion layers of thetrimming transistors are electrically connected to corresponding firstterminals of a plurality of operational circuits. The second gateelectrodes of the trimming transistors are electrically connected tocorresponding fourth terminals of the plurality of operational circuits.The plurality of operational circuits compare output signals which areinput from the plurality of aging devices via the trimming transistorswith a signal level stored in a first memory area. The operationalcircuits inject charges into or emit them from the first gate electrodesof the trimming transistors on the basis of the comparison result.

Each of a plurality of aging devices may comprise third and fourthdiffusion layers which are formed apart from each other in asemiconductor substrate, a third gate electrode which is formed via athird insulating film on the semiconductor substrate between the thirdand fourth diffusion layers, and a fourth gate electrode which is formedon the third gate electrode via a fourth gate insulating film. Either ofthe third and fourth diffusion layers of each of the plurality of agingdevices is shared with the first diffusion layer of the trimmingtransistor. The film thickness of the third gate insulating film of eachof the plurality of aging devices is smaller than the film thickness ofthe first gate insulating film of the trimming transistor.

Each of a plurality of circuit breakers may be a trimming transistorwhich has first and second diffusion layers formed apart from each otherin a semiconductor substrate, a first gate electrode formed via a firstinsulating film on the semiconductor substrate between the first andsecond diffusion layers, and a second gate electrode formed on the firstgate electrode via a second gate insulating film, and has the firstdiffusion layer electrically connected to the output terminal of theaging device. A plurality of operational circuits compare output signalswhich are input from the aging devices via the trimming transistors witha signal level stored in the first memory area. On the basis of thecomparison result, the operational circuits cut electrical connectionbetween the plurality of operational circuits and the trimmingtransistors or electrical connection between the plurality ofoperational circuits and an adder.

The circuit breaker may be a cutting trace at which interconnectionbetween the third terminal of the operational circuit and the adder iscut.

The integrated circuit may further comprise a third memory area where aresult of comparing by the operational circuit an output signal inputfrom the aging device into the operational circuit and a signal levelstored in the first memory area is stored. Each of a plurality ofcircuit breakers is a trimming transistor which has first and seconddiffusion layers formed apart from each other in a semiconductorsubstrate, a first gate electrode formed via a first insulating film onthe semiconductor substrate between the first and second diffusionlayers, and a second gate electrode formed on the first gate electrodevia a second gate insulating film, and has the first diffusion layerelectrically connected to the output terminal of the aging device.

The times until output signals from a plurality of aging devices reach apredetermined signal level stored in the first memory area are definedas the lives of the plurality of aging devices. The time until an outputadded by the adder reaches the level of a reference signal stored in asecond memory area is defined as the life time of the aging circuit. Inthis case, the life time of the aging circuit is controlled by adjustingthe predetermined signal level stored in the first memory area.

The aging devices forming an aging circuit is desirably configured byeither one of a normally-on type and a normally-off type. In thisconfiguration, a normally-on type aging circuit is formed only ofnormally-on type aging devices, and a normally-off type aging circuit isformed only of normally-off devices.

The time switch is preferably realized by the aging circuit. However,there is a possibility that the time switch is realized by a singleaging device upon a progress of a manufacturing process which enables toprevent the life time from varying.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventiveconcept as defined by the appended claims and their equivalents.

1. A semiconductor integrated circuit comprising: an aging circuitconfigured by series-connecting a plurality of aging devices in which anage-based change occurs while a power supply is disconnected, and anoutput signal sensed in read changes over time; and a sense circuitcomparing the output signal from the aging circuit with a referencesignal.
 2. The circuit according to claim 1, wherein when a time untilan output signal from each of the aging devices reaches a predeterminedlevel is defined as a life time of each of the aging devices and a timeuntil the output signal from the aging circuit reaches a level of thereference signal is defined as a life time of the aging circuit, thelevel of the reference signal is so set as to make the life time of theaging circuit longer than an average life time of the aging devices. 3.The circuit according to claim 1, wherein a level of the referencesignal is set to a value smaller by a predetermined offset amount than avalue at which the output signal from the aging circuit is maximizedupon a lapse of a time, or a value larger by a predetermined offsetamount than a value at which the output signal from the aging circuit isminimized upon a lapse of a time.
 4. The circuit according to claim 1,which further comprises a memory that stores the reference signal, andin which a level of the reference signal stored in the memory isadjusted to control a life time of the aging circuit.
 5. The circuitaccording to claim 1, wherein the aging device has a charge accumulationlayer accompanied by leakage while the power supply is disconnected. 6.The circuit according to claim 1, wherein the aging circuit comprises afirst sub-aging circuit configured by series-connecting a plurality offirst aging devices in which the output signal decreases over time, anda second sub-aging circuit configured by parallel-connecting a pluralityof second aging devices in which the output signal increases over time,the first sub-aging circuit and the second sub-aging circuit areseries-connected, and when a time until the output signal from the firstsub-aging circuit reaches a first predetermined level is defined as alife time of the first sub-aging circuit and a time until the secondsub-aging circuit reaches a second predetermined level is defined as alife time of the second sub-aging circuit, the life time of the firstsub-aging circuit is shorter than the life time of the second sub-agingcircuit.
 7. The circuit according to claim 1, wherein the aging circuitcomprises a first sub-aging circuit configured by series-connecting aplurality of first aging devices in which the output signal decreasesover time, and a second sub-aging circuit configured byparallel-connecting a plurality of second aging devices in which theoutput signal increases over time, the first sub-aging circuit and thesecond sub-aging circuit are parallel-connected, and when a time untilthe output signal from the first sub-aging circuit reaches apredetermined level is defined as a life time of the first sub-agingcircuit and a time until the second sub-aging circuit reaches thepredetermined level is defined as a life time of the second sub-agingcircuit, the life time of the first sub-aging circuit is longer than thelife time of the second sub-aging circuit.
 8. The circuit according toclaim 1, further comprising a memory area where correspondence codes ofthe output signal from the aging circuit and lapsed times are stored inadvance, and the sense circuit compares the output signal from the agingcircuit with the correspondence codes stored in the memory area, andsenses a lapsed operation time of the aging circuit.
 9. The circuitaccording to claim 1, wherein the aging circuit comprises N sub-agingcircuits each having a different life time from others defined by a timeuntil an added output signal from the plurality of aging devices withineach of the N sub-aging circuits reaches a predetermined-referencesignal set for each of the N sub-aging circuits, and the sense circuitcompares a serial addition of the added output signal from each of the Nsub-aging circuits with the predetermined reference signal, and senseswhether or not each of the N sub-aging circuit closes a life timethereof.
 10. The circuit according to claim 9, wherein each of the Nsub-aging circuits has the different life time from others by apredetermined time which is obtained by dividing, by N, a differencebetween the shortest life time and the longest life time among the Nsub-aging circuits, and the sense circuit senses a lapsed operation timeof the aging circuit by sensing each of the life times of the Nsub-aging circuits.